Invention Grant
- Patent Title: Method for forming a deep trench in a microelectronic component substrate
- Patent Title (中): 在微电子元件衬底中形成深沟槽的方法
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Application No.: US13713135Application Date: 2012-12-13
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Publication No.: US08828882B2Publication Date: 2014-09-09
- Inventor: Arnaud Tournier , Françcois Leverd
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1162070 20111220
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L29/06 ; H01L21/762 ; H01L21/3065
Abstract:
A trench is formed in a semiconductor substrate by depositing an etch mask on the substrate having an opening, etching of the trench through the opening, and doping the walls of the trench. The etching step includes a first phase having an etch power set to etch the substrate under the etch mask, and a second phase having an etch power set smaller than the power of the first phase. Further, the doping of the walls of the trench is applied through the opening of the etch mask.
Public/Granted literature
- US20130154051A1 METHOD FOR FORMING A DEEP TRENCH IN A MICROELECTRONIC COMPONENT SUBSTRATE Public/Granted day:2013-06-20
Information query
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