发明授权
- 专利标题： Non-volatile storage element having dual work-function electrodes
- 专利标题（中）： 具有双功能电极的非易失性存储元件
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申请号： US12967436申请日： 2010-12-14
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公开(公告)号： US08829592B2公开(公告)日： 2014-09-09
- 发明人: Walid M. Hafez , Anisur Rahman
- 申请人： Walid M. Hafez , Anisur Rahman
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/423 ; G11C16/04 ; H01L29/792 ; H01L49/02 ; H01L29/51 ; H01L21/28
摘要：
A non-volatile storage element and a method of forming the storage element. The non-volatile storage element comprises: a first electrode including a first material having a first work function; a second electrode including a second material having a second work function higher than the first work function; a first dielectric disposed between the first electrode and the second electrode, the first dielectric having a first bandgap; a second dielectric disposed between the first dielectric and the second electrode, the second dielectric having a second bandgap wider than the first bandgap and being disposed such that a quantum well is created in the first dielectric; and a third dielectric disposed between the first electrode and the first dielectric, the third dielectric being thinner than the second dielectric and having a third bandgap wider than the first bandgap.
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