发明授权
US08830743B2 Method of operating memory controller, memory controller, memory device and memory system
有权
操作内存控制器,内存控制器,内存设备和内存系统的方法
- 专利标题: Method of operating memory controller, memory controller, memory device and memory system
- 专利标题(中): 操作内存控制器,内存控制器,内存设备和内存系统的方法
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申请号: US13445048申请日: 2012-04-12
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公开(公告)号: US08830743B2公开(公告)日: 2014-09-09
- 发明人: Kyoung-Lae Cho , Jun-Jin Kong , Jae-Hong Kim
- 申请人: Kyoung-Lae Cho , Jun-Jin Kong , Jae-Hong Kim
- 申请人地址: KR Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2011-0035353 20110415
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C29/56 ; G11C11/56 ; G11C16/34 ; G11C29/12 ; G11C29/44
摘要:
A method of operating a memory controller, a memory controller, a memory device and a memory system are provided. The method includes reading first data from a nonvolatile memory device using a first read voltage, the first data includes a uncorrectable error bit, reading second data from a nonvolatile memory device using a second read voltage different from the first read voltage, the second data includes an correctable error bit, and reprogramming the nonvolatile memory device according to the comparison result of the first read voltage and the second read voltage.
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