发明授权
US08845932B2 Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
有权
含有铋 - 氧化碲的厚膜糊剂及其在制造半导体器件中的应用
- 专利标题： Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
- 专利标题（中）： 含有铋 - 氧化碲的厚膜糊剂及其在制造半导体器件中的应用
-
申请号： US13438124申请日： 2012-04-26
-
公开(公告)号： US08845932B2公开(公告)日： 2014-09-30
- 发明人: Kenneth Warren Hang , Yueli Wang
- 申请人： Kenneth Warren Hang , Yueli Wang
- 申请人地址： US DE Wilmington
- 专利权人： E I du Pont de Nemours and Company
- 当前专利权人： E I du Pont de Nemours and Company
- 当前专利权人地址： US DE Wilmington
- 主分类号： H01B1/02
- IPC分类号： H01B1/02
摘要：
The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a Pb-free bismuth-tellurium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.
公开/授权文献
信息查询
