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114 条记录 (耗时 0.026 秒)

    Method of manufacture of semiconductor device and conductive compositions used therein
    1.
    发明授权
    Method of manufacture of semiconductor device and conductive compositions used therein 失效
    其中使用的半导体器件和导电组合物的制造方法

    公开(公告)号：US07556748B2

    公开(公告)日：2009-07-07

    申请号：US11106329

    申请日：2005-04-14

    申请人： Yueli Wang ,  Richard John Sheffield Young ,  Alan Frederick Carroll ,  Kenneth Warren Hang

    发明人： Yueli Wang ,  Richard John Sheffield Young ,  Alan Frederick Carroll ,  Kenneth Warren Hang

    IPC分类号： H01B1/22

    CPC分类号： H01B1/22 ,  C03C3/064 ,  C03C3/072 ,  C03C3/0745 ,  C03C8/10 ,  C03C8/12 ,  C03C8/14 ,  C03C8/16 ,  C03C8/18 ,  C03C8/20 ,  C03C14/006 ,  C03C2214/08 ,  C03C2214/16 ,  H01L31/022425 ,  H05K1/092 ,  Y02E10/50

    摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium.The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

    摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （b）含锌添加剂，其中所述含锌添加剂的粒度在7纳米至小于100纳米的范围内; （c）玻璃料，其中所述玻璃料的软化点在300-600℃的范围内。 分散在（d）有机介质中。 本发明还涉及一种由半导体构成的半导体器件和半导体器件的制造方法，所述结构元件由在半导体主表面上形成的具有pn结和绝缘膜的半导体构成，包括以下步骤：（a）施加 在上述绝缘膜上形成如上所述的厚膜组合物; 和（b）烧制所述半导体，绝缘膜和厚膜组合物以形成电极。

    Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
    4.
    发明授权
    Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices 有权
    含有铋 - 氧化碲的厚膜糊剂及其在制造半导体器件中的应用

    公开(公告)号：US08845932B2

    公开(公告)日：2014-09-30

    申请号：US13438124

    申请日：2012-04-26

    申请人： Kenneth Warren Hang ,  Yueli Wang

    发明人： Kenneth Warren Hang ,  Yueli Wang

    IPC分类号： H01B1/02

    CPC分类号： H01B1/22 ,  H01L31/022425 ,  Y02E10/50

    摘要： The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a Pb-free bismuth-tellurium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.

    摘要翻译： 本发明涉及一种导电厚膜糊组合物，其包含导电Ag，选自Ni，Al及其混合物的第二导电金属和全部分散在有机介质中的无铅铋 - 碲氧化物 。 本发明还涉及由厚膜糊剂组合物和半导体器件形成的电极，特别是包括这种电极的太阳能电池。

    Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices
    5.
    发明授权
    Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices 有权
    含铅 - 碲 - 锂 - 氧化钛的厚膜糊剂及其在制造半导体器件中的应用

    公开(公告)号：US08696948B2

    公开(公告)日：2014-04-15

    申请号：US13546223

    申请日：2012-07-11

    申请人： Kenneth Warren Hang ,  Yueli Wang

    发明人： Kenneth Warren Hang ,  Yueli Wang

    IPC分类号： H01B1/22 ,  H01L31/0264

    CPC分类号： H01B1/22

    摘要： The present invention is directed to an electroconductive thick film paste composition comprising Ag and a lead-tellurium-lithium-titanium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.

    摘要翻译： 本发明涉及一种包含Ag和分散在有机介质中的铅 - 碲 - 锂 - 二氧化钛的导电厚膜糊组合物。 本发明还涉及由糊料组合物和半导体器件形成的电极，特别是包括这种电极的太阳能电池。

    ELECTROCONDUCTIVE THICK FILM COMPOSITION(S), ELECTRODE(S), AND SEMICONDUCTOR DEVICE(S) FORMED THEREFROM
    6.
    发明申请
    ELECTROCONDUCTIVE THICK FILM COMPOSITION(S), ELECTRODE(S), AND SEMICONDUCTOR DEVICE(S) FORMED THEREFROM 审中-公开
    电极厚膜组合物（S），电极（S）及其形成的半导体器件（S）

    公开(公告)号：US20120119165A1

    公开(公告)日：2012-05-17

    申请号：US13357073

    申请日：2012-01-24

    申请人： Yueli Wang ,  Kenneth Warren Hang

    发明人： Yueli Wang ,  Kenneth Warren Hang

    IPC分类号： H01B1/22

    CPC分类号： C03C3/064 ,  C03C3/066 ,  C03C8/04 ,  C03C8/18 ,  C03C14/006 ,  C03C2214/08 ,  C03C2214/16 ,  H01B1/22 ,  H01L31/022425 ,  H01L2924/0002 ,  H05K1/092 ,  Y02E10/542 ,  H01L2924/00

    摘要： The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode.

    摘要翻译： 本发明涉及导电厚膜组合物，其包含：（a）选自（1）Al，Cu，Au，Ag，Pd和Pt中的导电金属颗粒; （2）Al，Cu，Au，Ag，Pd和Pt的合金; 和（3）它们的混合物; （3）玻璃料，其中所述玻璃料是无铅的; 分散在（d）有机介质中，并且其中所述导电金属颗粒的平均直径在0.5-10.0μm的范围内。 本发明还涉及由上述组合物形成的电极和包括所述电极的半导体器件（例如，太阳能电池）。

    Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
    7.
    发明授权
    Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom 有权
    导电厚膜组合物，电极和由其形成的半导体器件

    公开(公告)号：US08123985B2

    公开(公告)日：2012-02-28

    申请号：US12834968

    申请日：2010-09-24

    申请人： Yueli Wang ,  Kenneth Warren Hang

    发明人： Yueli Wang ,  Kenneth Warren Hang

    IPC分类号： H01B1/22

    CPC分类号： C03C3/064 ,  C03C3/066 ,  C03C8/04 ,  C03C8/18 ,  C03C14/006 ,  C03C2214/08 ,  C03C2214/16 ,  H01B1/22 ,  H01L31/022425 ,  H01L2924/0002 ,  H05K1/092 ,  Y02E10/542 ,  H01L2924/00

    摘要： The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode.

    摘要翻译： 本发明涉及导电厚膜组合物，其包含：（a）选自（1）Al，Cu，Au，Ag，Pd和Pt中的导电金属颗粒; （2）Al，Cu，Au，Ag，Pd和Pt的合金; 和（3）它们的混合物; （3）玻璃料，其中所述玻璃料是无铅的; 分散在（d）有机介质中，并且其中所述导电金属颗粒的平均直径在0.5-10.0μm的范围内。 本发明还涉及由上述组合物形成的电极和包括所述电极的半导体器件（例如，太阳能电池）。

    Thick film paste containing lead-tellurium-lithium-titanium-oxide and its use in the manufacture of semiconductor devices
    9.
    发明授权
    Thick film paste containing lead-tellurium-lithium-titanium-oxide and its use in the manufacture of semiconductor devices 失效
    含铅 - 碲 - 锂 - 氧化钛的厚膜糊剂及其在制造半导体器件中的应用

    公开(公告)号：US08691119B2

    公开(公告)日：2014-04-08

    申请号：US13556645

    申请日：2012-07-24

    申请人： Kenneth Warren Hang ,  Yueli Wang

    发明人： Kenneth Warren Hang ,  Yueli Wang

    IPC分类号： H01B1/22 ,  H01L31/0224 ,  H01L35/14

    CPC分类号： H01B1/22

    摘要： The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a lead-tellurium-lithium-titanium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.

    摘要翻译： 本发明涉及一种导电厚膜糊剂组合物，其包含导电Ag，选自Ni，Al及其混合物的第二导电金属和全部分散在有机物中的铅 - 碲 - 锂 - 氧化钛 中。 本发明还涉及由厚膜糊剂组合物和半导体器件形成的电极，特别是包括这种电极的太阳能电池。