发明授权
US08846466B2 Forming inter-device STI regions and intra-device STI regions using different dielectric materials
有权
使用不同的介电材料形成器件间STI区和器件内部区域
- 专利标题： Forming inter-device STI regions and intra-device STI regions using different dielectric materials
- 专利标题（中）： 使用不同的介电材料形成器件间STI区和器件内部区域
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申请号： US14019338申请日： 2013-09-05
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公开(公告)号： US08846466B2公开(公告)日： 2014-09-30
- 发明人: Feng Yuan , Tsung-Lin Lee , Hung-Ming Chen , Chang-Yun Chang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L27/12 ; H01L21/84 ; H01L21/762 ; H01L27/088 ; H01L21/8234
摘要：
An integrated circuit structure includes a substrate having a first portion in a first device region and a second portion in a second device region; and two insulation regions in the first device region and over the substrate. The two insulation regions include a first dielectric material having a first k value. A semiconductor strip is between and adjoining the two insulation regions, with a top portion of the semiconductor strip forming a semiconductor fin over top surfaces of the two insulation regions. An additional insulation region is in the second device region and over the substrate. The additional insulation region includes a second dielectric material having a second k value greater than the first k value.
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