发明授权
US08847252B2 III-nitride light emitting device with double heterostructure light emitting region
有权
具有双异质结构发光区域的III族氮化物发光器件
- 专利标题： III-nitride light emitting device with double heterostructure light emitting region
- 专利标题（中）： 具有双异质结构发光区域的III族氮化物发光器件
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申请号： US12495464申请日： 2009-06-30
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公开(公告)号： US08847252B2公开(公告)日： 2014-09-30
- 发明人: Yu-Chen Shen , Nathan F. Gardner , Satoshi Watanabe , Michael R. Krames , Gerd O. Mueller
- 申请人： Yu-Chen Shen , Nathan F. Gardner , Satoshi Watanabe , Michael R. Krames , Gerd O. Mueller
- 申请人地址： US CA San Jose
- 专利权人： Philips Lumileds Lighting Company, LLC
- 当前专利权人： Philips Lumileds Lighting Company, LLC
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L33/32
- IPC分类号： H01L33/32 ; H01L33/04 ; H01L33/06
摘要：
A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
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