Invention Grant
- Patent Title: Strained silicon channel semiconductor structure
- Patent Title (中): 应变硅沟道半导体结构
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Application No.: US13905148Application Date: 2013-05-30
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Publication No.: US08853740B2Publication Date: 2014-10-07
- Inventor: Chan-Lon Yang , Ted Ming-Lang Guo , Chin-I Liao , Chin-Cheng Chien , Shu-Yen Chan , Chun-Yuan Wu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/324 ; H01L21/8234 ; H01L21/306
Abstract:
A strained silicon channel semiconductor structure comprises a substrate having an upper surface, a gate structure formed on the upper surface, at least one recess formed in the substrate at lateral sides of the gate structure, wherein the recess has at least one sidewall which has an upper sidewall and a lower sidewall concaved in the direction to the gate structure, and the included angle between the upper sidewall and horizontal plane ranges between 54.5°-90°, and an epitaxial layer filled into the two recesses.
Public/Granted literature
- US20130256701A1 STRAINED SILICON CHANNEL SEMICONDUCTOR STRUCTURE Public/Granted day:2013-10-03
Information query
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