Invention Grant
- Patent Title: High-K metal gate device
- Patent Title (中): 高K金属门装置
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Application No.: US13110922Application Date: 2011-05-19
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Publication No.: US08853796B2Publication Date: 2014-10-07
- Inventor: Young Way Teh , Michael V. Aquilino , Arifuzzaman (Arif) Sheikh , Yun Ling Tan , Hao Zhang , Deleep R. Nair , Jinghong H. (John) Li
- Applicant: Young Way Teh , Michael V. Aquilino , Arifuzzaman (Arif) Sheikh , Yun Ling Tan , Hao Zhang , Deleep R. Nair , Jinghong H. (John) Li
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDIERS Singapore Pte. Ltd.,International Business Machines Corporation
- Current Assignee: GLOBALFOUNDIERS Singapore Pte. Ltd.,International Business Machines Corporation
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte Ltd
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/28 ; H01L29/423 ; H01L29/51 ; H01L29/49
Abstract:
A device includes a substrate with a device region surrounded by an isolation region, in which the device region includes edge portions along a width of the device region and a central portion. The device further includes a gate layer disposed on the substrate over the device region, in which the gate layer includes a graded thickness in which the gate layer at edge portions of the device region has a thickness TE that is different from a thickness TC at the central portion of the device region.
Public/Granted literature
- US20120292719A1 HIGH-K METAL GATE DEVICE Public/Granted day:2012-11-22
Information query
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