发明授权
- 专利标题: Methods of forming metal oxide and memory cells
- 专利标题(中): 形成金属氧化物和记忆细胞的方法
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申请号: US13282355申请日: 2011-10-26
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公开(公告)号: US08859382B2公开(公告)日: 2014-10-14
- 发明人: Noel Rocklein , D. V. Nirmal Ramaswamy , Dale W. Collins , Swapnil Lengade , Srividya Krishnamurthy , Mark Korber
- 申请人: Noel Rocklein , D. V. Nirmal Ramaswamy , Dale W. Collins , Swapnil Lengade , Srividya Krishnamurthy , Mark Korber
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John P.S.
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; H01L45/00
摘要:
Some embodiments include methods of forming memory cells. Metal oxide may be deposited over a first electrode, with the deposited metal oxide having a relatively low degree of crystallinity. The degree of crystallinity within the metal oxide may be increased after the deposition of the metal oxide. A dielectric material may be formed over the metal oxide, and a second electrode may be formed over the dielectric material. The degree of crystallinity may be increased with a thermal treatment. The thermal treatment may be conducted before, during, and/or after formation of the dielectric material.
公开/授权文献
- US20130109147A1 Methods of Forming Metal Oxide and Memory Cells 公开/授权日:2013-05-02