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    Memory Cells, Methods Of Forming Dielectric Materials, And Methods Of Forming Memory Cells
    3.
    发明申请
    Memory Cells, Methods Of Forming Dielectric Materials, And Methods Of Forming Memory Cells 有权
    记忆细胞，形成介电材料的方法和形成记忆细胞的方法

    公开(公告)号：US20110220989A1

    公开(公告)日：2011-09-15

    申请号：US13116401

    申请日：2011-05-26

    申请人： D. V. Nirmal Ramaswamy ,  Noel Rocklein ,  Kyu S. Min

    发明人： D. V. Nirmal Ramaswamy ,  Noel Rocklein ,  Kyu S. Min

    IPC分类号： H01L29/792 ,  H01L21/28

    CPC分类号： H01L29/7881 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792

    摘要： Some embodiments include memory cells. The memory cells may include a tunnel dielectric material, a charge-retaining region over the tunnel dielectric material, crystalline ultra-high k dielectric material over the charge-retaining region, and a control gate material over the crystalline ultra-high k dielectric material. Additionally, the memory cells may include an amorphous region between the charge-retaining region and the crystalline ultra-high k dielectric material, and/or may include an amorphous region between the crystalline ultra-high k dielectric material and the control gate material. Some embodiments include methods of forming memory cells which contain an amorphous region between a charge-retaining region and a crystalline ultra-high k dielectric material, and/or which contain an amorphous region between a crystalline ultra-high k dielectric material and a control gate material.

    摘要翻译： 一些实施例包括存储器单元。 存储单元可以包括隧道电介质材料，隧道电介质材料上方的电荷保持区域，电荷保持区域上的结晶超高k电介质材料，以及结晶超高k电介质材料上的控制栅极材料。 此外，存储器单元可以包括电荷保持区域和结晶超高k电介质材料之间的非晶区域，和/或可以包括晶体超高k电介质材料和控制栅极材料之间的非晶区域。 一些实施例包括形成在电荷保持区域和结晶超高k电介质材料之间形成非晶区域的存储单元的方法，和/或在晶体超高k电介质材料和控制栅极之间包含非晶区域的方法 材料。

    Memory cells, methods of forming dielectric materials, and methods of forming memory cells
    4.
    发明授权
    Memory cells, methods of forming dielectric materials, and methods of forming memory cells 有权
    记忆单元，介电材料的形成方法以及形成记忆单元的方法

    公开(公告)号：US08183110B2

    公开(公告)日：2012-05-22

    申请号：US13116401

    申请日：2011-05-26

    申请人： D. V. Nirmal Ramaswamy ,  Noel Rocklein ,  Kyu S. Min

    发明人： D. V. Nirmal Ramaswamy ,  Noel Rocklein ,  Kyu S. Min

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7881 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792

    摘要： Some embodiments include memory cells. The memory cells may include a tunnel dielectric material, a charge-retaining region over the tunnel dielectric material, crystalline ultra-high k dielectric material over the charge-retaining region, and a control gate material over the crystalline ultra-high k dielectric material. Additionally, the memory cells may include an amorphous region between the charge-retaining region and the crystalline ultra-high k dielectric material, and/or may include an amorphous region between the crystalline ultra-high k dielectric material and the control gate material. Some embodiments include methods of forming memory cells which contain an amorphous region between a charge-retaining region and a crystalline ultra-high k dielectric material, and/or which contain an amorphous region between a crystalline ultra-high k dielectric material and a control gate material.

    摘要翻译： 一些实施例包括存储器单元。 存储单元可以包括隧道电介质材料，隧道电介质材料上方的电荷保持区域，电荷保持区域上的结晶超高k电介质材料，以及结晶超高k电介质材料上的控制栅极材料。 此外，存储器单元可以包括电荷保持区域和结晶超高k电介质材料之间的非晶区域，和/或可以包括晶体超高k电介质材料和控制栅极材料之间的非晶区域。 一些实施例包括形成在电荷保持区域和结晶超高k电介质材料之间形成非晶区域的存储单元的方法，和/或在晶体超高k电介质材料和控制栅极之间包含非晶区域的方法 材料。

    Memory cells, methods of forming dielectric materials, and methods of forming memory cells
    5.
    发明授权
    Memory cells, methods of forming dielectric materials, and methods of forming memory cells 有权
    记忆单元，介电材料的形成方法以及形成记忆单元的方法

    公开(公告)号：US07968406B2

    公开(公告)日：2011-06-28

    申请号：US12351099

    申请日：2009-01-09

    申请人： D. V. Nirmal Ramaswamy ,  Noel Rocklein ,  Kyu S. Min

    发明人： D. V. Nirmal Ramaswamy ,  Noel Rocklein ,  Kyu S. Min

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7881 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/792

    摘要： Some embodiments include memory cells. The memory cells may include a tunnel dielectric material, a charge-retaining region over the tunnel dielectric material, crystalline ultra-high k dielectric material over the charge-retaining region, and a control gate material over the crystalline ultra-high k dielectric material. Additionally, the memory cells may include an amorphous region between the charge-retaining region and the crystalline ultra-high k dielectric material, and/or may include an amorphous region between the crystalline ultra-high k dielectric material and the control gate material. Some embodiments include methods of forming memory cells which contain an amorphous region between a charge-retaining region and a crystalline ultra-high k dielectric material, and/or which contain an amorphous region between a crystalline ultra-high k dielectric material and a control gate material.

    摘要翻译： 一些实施例包括存储器单元。 存储单元可以包括隧道电介质材料，隧道电介质材料上方的电荷保持区域，电荷保持区域上的结晶超高k电介质材料，以及结晶超高k电介质材料上的控制栅极材料。 此外，存储器单元可以包括电荷保持区域和结晶超高k电介质材料之间的非晶区域，和/或可以包括晶体超高k电介质材料和控制栅极材料之间的非晶区域。 一些实施例包括形成在电荷保持区域和结晶超高k电介质材料之间形成非晶区域的存储单元的方法，和/或在晶体超高k电介质材料和控制栅极之间包含非晶区域的方法 材料。

    Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials
    8.
    发明申请
    Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials 失效
    具有包含多种金属氧化物的材料的介电区域的电容器

    公开(公告)号：US20100315760A1

    公开(公告)日：2010-12-16

    申请号：US12483474

    申请日：2009-06-12

    申请人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

    发明人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

    IPC分类号： H01G4/10

    CPC分类号： H01L28/56 ,  H01G4/10 ,  H01L27/108

    摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

    摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

    Capacitors and methods of forming capacitors
    9.
    发明申请
    Capacitors and methods of forming capacitors 有权
    电容器和形成电容器的方法

    公开(公告)号：US20080014694A1

    公开(公告)日：2008-01-17

    申请号：US11488587

    申请日：2006-07-17

    申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

    发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

    IPC分类号： H01L21/8244

    CPC分类号： H01L28/60 ,  Y10T29/417

    摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

    摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN材料的TiN被有效氧化，以形成电阻率不大于1欧姆·厘米的导电性TiO 2，其中x越大 0和y为0至1.4。 电容器电介质形成在导电TiO 2上。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。