发明授权
- 专利标题: Semiconductor device and manufacturing method of semiconductor device
- 专利标题(中): 半导体器件及半导体器件的制造方法
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申请号: US13614217申请日: 2012-09-13
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公开(公告)号: US08865589B2公开(公告)日: 2014-10-21
- 发明人: Takaki Hashimoto , Yasunobu Kai , Toshiya Kotani
- 申请人: Takaki Hashimoto , Yasunobu Kai , Toshiya Kotani
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2012-036187 20120222
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; H01L21/768 ; H01L21/311 ; H01L23/528 ; H01L21/033 ; H01L27/115
摘要:
According to one embodiment, a semiconductor device includes a plurality of wires arranged in parallel at a predetermined pitch, a plurality at first contacts that are each connected to an odd-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to a wiring direction of the wires, and a plurality of second contacts that are each connected to an even-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to the wiring direction of the wires in such a way as to be offset from the first contacts in the wiring direction of the wires, in which the first contacts are offset from the second contacts by a pitch of the wires in an orthogonal direction with respect to the wiring direction of the wires.
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