Invention Grant
US08865599B2 Self-leveling planarization materials for microelectronic topography 有权
用于微电子拓扑的自流平平面化材料

Self-leveling planarization materials for microelectronic topography
Abstract:
Planarization methods and microelectronic structures formed therefrom are disclosed. The methods and structures use planarization materials comprising fluorinated compounds or acetoacetylated compounds. The materials are self-leveling and achieve planarization over topography without the use of etching, contact planarization, chemical mechanical polishing, or other conventional planarization techniques.
Information query
Patent Agency Ranking
0/0