Invention Grant
- Patent Title: Method for forming high density patterns
- Patent Title (中): 形成高密度图案的方法
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Application No.: US13690266Application Date: 2012-11-30
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Publication No.: US08871648B2Publication Date: 2014-10-28
- Inventor: Baosuo Zhou , Gurtej S. Sandhu , Ardavan Niroomand
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033 ; H01L21/768
Abstract:
In one or more embodiments, a method is provided for forming an integrated circuit with a pattern of isolated features having a final density of isolated features that is greater than a starting density of isolated features in an integrated circuit by a multiple of two or more. The method can include forming a pattern of pillars having a density X, and forming a pattern of holes amongst the pillars, the holes having a density at least X. The pillars can be selectively removed to form a pattern of holes having a density at least 2X. In some embodiments, plugs can be formed in the pattern of holes, such as by epitaxial deposition on the substrate, in order to provide a pattern of pillars having a density 2X. In other embodiments, the pattern of holes can be transferred to the substrate by etching.
Public/Granted literature
- US20130089977A1 METHOD FOR FORMING HIGH DENSITY PATTERNS Public/Granted day:2013-04-11
Information query
IPC分类:
