发明授权
US08872269B2 Antenna cell design to prevent plasma induced gate dielectric damage in semiconductor integrated circuits
有权
天线电池设计,以防止半导体集成电路中的等离子体感应栅介质损坏
- 专利标题: Antenna cell design to prevent plasma induced gate dielectric damage in semiconductor integrated circuits
- 专利标题(中): 天线电池设计,以防止半导体集成电路中的等离子体感应栅介质损坏
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申请号: US13316807申请日: 2011-12-12
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公开(公告)号: US08872269B2公开(公告)日: 2014-10-28
- 发明人: Jen-Hang Yang , Chun-Fu Chen , Pin-Dai Sue , Hui-Zhong Zhuang
- 申请人: Jen-Hang Yang , Chun-Fu Chen , Pin-Dai Sue , Hui-Zhong Zhuang
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: H01L21/70
- IPC分类号: H01L21/70
摘要:
An antenna cell for preventing plasma enhanced gate dielectric failures, is provided. The antenna cell design utilizes a polysilicon lead as a gate for a dummy transistor. The polysilicon lead may be one of a group of parallel, nested polysilicon lead. The dummy transistor includes the gate coupled to a substrate maintained at VSS, either directly through a metal lead or indirectly through a tie-low cell. The gate is disposed over a dielectric disposed over a continuous source/drain region in which the source and drain are tied together. A diode is formed with the semiconductor substrate within which it is formed. The source/drain region is coupled to another metal lead which may be an input pin and is coupled to active transistor gates, preventing plasma enhanced gate dielectric damage to the active transistors.