发明授权
- 专利标题： Semiconductor device having improved RF characteristics and moisture resistance and method for manufacturing the same
- 专利标题（中）： 具有改进的RF特性和耐湿性的半导体器件及其制造方法
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申请号： US13545046申请日： 2012-07-10
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公开(公告)号： US08878333B2公开(公告)日： 2014-11-04
- 发明人: Youichi Nogami , Hidetoshi Koyama , Yoshitsugu Yamamoto
- 申请人： Youichi Nogami , Hidetoshi Koyama , Yoshitsugu Yamamoto
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： JP2011-190751 20110901
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L23/482
摘要：
A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring; an air gap between the main surface and an air gap forming film on the main surface, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering a second end of the metal wiring; a liquid repellent film facing the air gap and increasing contact angle of the resin, when liquid, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin.
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