公开(公告)号：US08878333B2

公开(公告)日：2014-11-04

申请号：US13545046

申请日：2012-07-10

申请人： Youichi Nogami ,  Hidetoshi Koyama ,  Yoshitsugu Yamamoto

发明人： Youichi Nogami ,  Hidetoshi Koyama ,  Yoshitsugu Yamamoto

IPC分类号： H01L21/70 ,  H01L23/482

CPC分类号： H01L23/4855 ,  H01L23/481 ,  H01L23/482 ,  H01L23/4821 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring; an air gap between the main surface and an air gap forming film on the main surface, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering a second end of the metal wiring; a liquid repellent film facing the air gap and increasing contact angle of the resin, when liquid, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin.

摘要翻译： 半导体器件包括：具有主表面的半导体衬底; 主表面上的器件区域中的电极; 在主表面上的金属布线，并且具有连接到电极的第一端; 位于器件区域外部并与金属布线间隔开的电极焊盘; 主表面和主表面上的气隙形成膜之间的气隙，包围金属布线和电极的第一端，并具有第一开口; 封闭所述第一开口并覆盖所述金属布线的第二端的树脂; 相对于半导体衬底和气隙形成膜上的接触角，面向气隙的防液膜和当液体相对于树脂的接触角增大时， 以及通过位于树脂中的第二开口将金属布线连接到电极焊盘的金属膜。

公开(公告)号：US20110006351A1

公开(公告)日：2011-01-13

申请号：US12828328

申请日：2010-07-01

申请人： Tetsuo Kunii ,  Hirotaka Amasuga ,  Yoshitsugu Yamamoto ,  Youichi Nogami

发明人： Tetsuo Kunii ,  Hirotaka Amasuga ,  Yoshitsugu Yamamoto ,  Youichi Nogami

IPC分类号： H01L27/06 ,  H01L29/78 ,  H01L27/088

CPC分类号： H01L29/4238 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/812

摘要： A semiconductor device includes: a semiconductor substrate; an impurity-doped region at a top surface of the semiconductor substrate; an insulating region located around the impurity-doped region on the top surface of the semiconductor substrate; a gate electrode on the impurity-doped region; a first electrode and a second electrode located on the impurity-doped region, sandwiching the gate electrode; a first pad located on the insulating region and connected to the gate electrode; a second pad facing the first pad across the impurity-doped region, on the insulating region, and connected to the second electrode; and a conductor located between the first electrode and the second pad on the insulating region.

摘要翻译： 半导体器件包括：半导体衬底; 在所述半导体衬底的顶表面处的杂质掺杂区域; 绝缘区域，位于半导体衬底的顶表面上的杂质掺杂区域周围; 杂质掺杂区上的栅电极; 位于所述杂质掺杂区域上的第一电极和第二电极，夹着所述栅电极; 位于所述绝缘区域上并连接到所述栅电极的第一焊盘; 在所述绝缘区域上跨越所述杂质掺杂区域面对所述第一焊盘的第二焊盘，并且连接到所述第二电极; 以及位于绝缘区域上的第一电极和第二焊盘之间的导体。

公开(公告)号：US08232609B2

公开(公告)日：2012-07-31

申请号：US12828328

申请日：2010-07-01

申请人： Tetsuo Kunii ,  Hirotaka Amasuga ,  Yoshitsugu Yamamoto ,  Youichi Nogami

发明人： Tetsuo Kunii ,  Hirotaka Amasuga ,  Yoshitsugu Yamamoto ,  Youichi Nogami

IPC分类号： H01L29/76

CPC分类号： H01L29/4238 ,  H01L27/0207 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/812

摘要： A semiconductor device includes: a semiconductor substrate; an impurity-doped region at a top surface of the semiconductor substrate; an insulating region located around the impurity-doped region on the top surface of the semiconductor substrate; a gate electrode on the impurity-doped region; a first electrode and a second electrode located on the impurity-doped region, sandwiching the gate electrode; a first pad located on the insulating region and connected to the gate electrode; a second pad facing the first pad across the impurity-doped region, on the insulating region, and connected to the second electrode; and a conductor located between the first electrode and the second pad on the insulating region.

摘要翻译： 半导体器件包括：半导体衬底; 在所述半导体衬底的顶表面处的杂质掺杂区域; 绝缘区域，位于半导体衬底的顶表面上的杂质掺杂区域周围; 杂质掺杂区上的栅电极; 位于所述杂质掺杂区域上的第一电极和第二电极，夹着所述栅电极; 位于所述绝缘区域上并连接到所述栅电极的第一焊盘; 在所述绝缘区域上跨越所述杂质掺杂区域面对所述第一焊盘的第二焊盘，并且连接到所述第二电极; 以及位于所述绝缘区域上的所述第一电极和所述第二焊盘之间的导体。

公开(公告)号：US5916411A

公开(公告)日：1999-06-29

申请号：US661781

申请日：1996-06-13

申请人： Youichi Nogami

发明人： Youichi Nogami

IPC分类号： C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

CPC分类号： H01L21/67109 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32559 ,  H01L21/31116 ,  H01L21/67069

摘要： An etching system for manufacturing a semiconductor device includes: a carbon electrode provided in a reactor chamber; a cooling device for cooling the carbon electrode; a temperature sensor for detecting the temperature of the carbon electrode; a heat-insulator provided in such a manner as to cover the outer peripheral portion of the temperature sensor for preventing the temperature sensor from being thermally affected by a portion other than the carbon electrode; and a controller, connected to the temperature sensor, for controlling the cooling device on the basis of a detection signal outputted from the temperature sensor. This etching system controls the supply amount of carbon from the carbon electrode introduced into plasma for stabilizing an etching process.

摘要翻译： 用于制造半导体器件的蚀刻系统包括：设置在反应室中的碳电极; 用于冷却碳电极的冷却装置; 用于检测碳电极的温度的温度传感器; 以覆盖温度传感器的外周部分的方式设置的绝热体，用于防止温度传感器受到除碳电极之外的部分的热影响; 以及连接到温度传感器的控制器，用于基于从温度传感器输出的检测信号来控制冷却装置。 该蚀刻系统控制从引入等离子体的碳电极的碳的供给量，以稳定蚀刻工艺。