Invention Grant
- Patent Title: Methods of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13894736Application Date: 2013-05-15
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Publication No.: US08883608B2Publication Date: 2014-11-11
- Inventor: Jong-Hoon Kang , Tae-Gon Kim , Han-Mei Choi , Eun-Young Jo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0095495 20120830
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L27/108 ; H01L21/3213 ; H01L23/544 ; H01L49/02 ; H01L21/027
Abstract:
An alignment mark is formed on a substrate including a first region and a second region. The alignment mark is formed in the second region. An etch target layer including a crystalline material is formed on the alignment mark and the substrate. The etch target layer in the first region is partially amorphized. The amorphized etch target layer is etched to form an opening.
Public/Granted literature
- US20140065793A1 METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2014-03-06
Information query
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