发明授权
- 专利标题： Method of manufacturing of trench substrate
- 专利标题（中）： 沟槽衬底的制造方法
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申请号： US13310319申请日： 2011-12-02
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公开(公告)号： US08883647B2公开(公告)日： 2014-11-11
- 发明人: Young Gwan Ko , Ryoichi Watanabe , Sang Soo Lee
- 申请人： Young Gwan Ko , Ryoichi Watanabe , Sang Soo Lee
- 申请人地址： KR Gyunggi-Do
- 专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址： KR Gyunggi-Do
- 代理机构： Bracewell & Giuliani LLP
- 代理商 Brad Y. Chin
- 优先权： KR10-2009-0033216 20090416
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L23/498 ; H01L21/48 ; H05K3/46 ; H05K3/04 ; H05K3/06 ; H01L21/321
摘要：
Disclosed herein are a trench substrate and a method of manufacturing the same. The trench substrate includes a base substrate, an insulating layer formed on one side or both sides of the base substrate and including trenches formed in a circuit region and a dummy region positioned at a peripheral edge of the trench substrate, and a circuit layer formed in the trenches of the circuit region through a plating process and including a circuit pattern and vias. Thanks to formation of the trenches in the dummy region and the cutting region, deviation in thickness of a plating layer formed on the insulating layer in a plating process is improved upon.
公开/授权文献
- US20120077333A1 TRENCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 公开/授权日：2012-03-29
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