Invention Grant
- Patent Title: Method of manufacturing of trench substrate
- Patent Title (中): 沟槽衬底的制造方法
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Application No.: US13310319Application Date: 2011-12-02
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Publication No.: US08883647B2Publication Date: 2014-11-11
- Inventor: Young Gwan Ko , Ryoichi Watanabe , Sang Soo Lee
- Applicant: Young Gwan Ko , Ryoichi Watanabe , Sang Soo Lee
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: Bracewell & Giuliani LLP
- Agent Brad Y. Chin
- Priority: KR10-2009-0033216 20090416
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L23/498 ; H01L21/48 ; H05K3/46 ; H05K3/04 ; H05K3/06 ; H01L21/321

Abstract:
Disclosed herein are a trench substrate and a method of manufacturing the same. The trench substrate includes a base substrate, an insulating layer formed on one side or both sides of the base substrate and including trenches formed in a circuit region and a dummy region positioned at a peripheral edge of the trench substrate, and a circuit layer formed in the trenches of the circuit region through a plating process and including a circuit pattern and vias. Thanks to formation of the trenches in the dummy region and the cutting region, deviation in thickness of a plating layer formed on the insulating layer in a plating process is improved upon.
Public/Granted literature
- US20120077333A1 TRENCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-03-29
Information query
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