Invention Grant
US08889339B2 Resist pattern forming method, resist pattern, crosslinkable negative chemical amplification resist composition for organic solvent development, resist film and resist-coated mask blanks
有权
抗蚀剂图案形成方法，抗蚀剂图案，用于有机溶剂显影的可交联负极化学放大抗蚀剂组合物，抗蚀剂膜和抗蚀剂掩模毛坯
- Patent Title: Resist pattern forming method, resist pattern, crosslinkable negative chemical amplification resist composition for organic solvent development, resist film and resist-coated mask blanks
- Patent Title (中): 抗蚀剂图案形成方法，抗蚀剂图案，用于有机溶剂显影的可交联负极化学放大抗蚀剂组合物，抗蚀剂膜和抗蚀剂掩模毛坯
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Application No.: US14035484Application Date: 2013-09-24
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Publication No.: US08889339B2Publication Date: 2014-11-18
- Inventor: Toru Tsuchihashi , Tadateru Yatsuo , Koutarou Takahashi , Tomotaka Tsuchimura
- Applicant: Toru Tsuchihashi , Tadateru Yatsuo , Koutarou Takahashi , Tomotaka Tsuchimura
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-068467 20110325
- Main IPC: G03F1/50
- IPC: G03F1/50 ; G03F7/20 ; G03F7/32 ; C08F8/14 ; C08F12/24 ; C08F212/14 ; C08J3/24 ; G03F7/038 ; G03F7/004
Abstract:
A resist pattern forming method contains: in the following order, (1) forming a resist film by using a negative chemical amplification resist composition containing (A) a polymer compound having a repeating unit represented by formula (1) as defined in the specification, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a crosslinking agent capable of crosslinking the polymer compound (A) by an action of an acid; (2) exposing the resist film, so as to form an exposed resist film; and (4) developing the exposed resist film by using a developer containing an organic solvent.
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