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1.发明授权Resist pattern forming method, resist pattern, crosslinkable negative chemical amplification resist composition for organic solvent development, resist film and resist-coated mask blanks 有权抗蚀剂图案形成方法，抗蚀剂图案，用于有机溶剂显影的可交联负极化学放大抗蚀剂组合物，抗蚀剂膜和抗蚀剂掩模毛坯公开(公告)号：US08889339B2
公开(公告)日：2014-11-18
申请号：US14035484
申请日：2013-09-24
IPC分类号： G03F1/50 , G03F7/20 , G03F7/32 , C08F8/14 , C08F12/24 , C08F212/14 , C08J3/24 , G03F7/038 , G03F7/004
CPC分类号： G03F7/20 , C08F8/14 , C08F12/24 , C08F212/14 , C08J3/24 , C08J2325/18 , G03F1/50 , G03F7/004 , G03F7/0382 , G03F7/325 , Y10S430/143 , C08F212/32
摘要： A resist pattern forming method contains: in the following order, (1) forming a resist film by using a negative chemical amplification resist composition containing (A) a polymer compound having a repeating unit represented by formula (1) as defined in the specification, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a crosslinking agent capable of crosslinking the polymer compound (A) by an action of an acid; (2) exposing the resist film, so as to form an exposed resist film; and (4) developing the exposed resist film by using a developer containing an organic solvent.
摘要翻译： 抗蚀剂图案形成方法包括：（1）通过使用含有（A）具有如说明书中定义的由式（1）表示的重复单元的高分子化合物的负性化学增幅抗蚀剂组合物形成抗蚀剂膜， （B）能够通过光化射线或辐射照射时能够产生酸的化合物和（C）能够通过酸的作用使高分子化合物（A）交联的交联剂; （2）使抗蚀剂膜曝光，形成曝光的抗蚀剂膜; 和（4）通过使用含有有机溶剂的显影剂显影曝光的抗蚀剂膜。
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2.发明授权Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the composition and pattern forming method 有权光化射线敏感或辐射敏感树脂组合物，抗蚀剂膜采用组合物和图案形成方法公开(公告)号：US08735048B2
公开(公告)日：2014-05-27
申请号：US13575833
申请日：2011-01-27
CPC分类号： C08F8/00 , C08F8/02 , G03F7/0045 , G03F7/0046 , G03F7/0397 , C08F112/14
摘要： An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.
摘要翻译： 一种光化射线敏感或辐射敏感性树脂组合物，其包含（P）具有由下式（1）表示的重复单元的树脂，使用该组合物的抗蚀剂膜和图案形成方法。
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3.发明申请ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION 审中-公开丙酰胺或辐射敏感性树脂组合物和使用组合物形成图案的方法公开(公告)号：US20120003585A1
公开(公告)日：2012-01-05
申请号：US13256167
申请日：2010-03-12
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046
摘要： According to one embodiment, an actinic-ray- or radiation-sensitive resin composition comprises (A) any of the compounds of General Formula (I) below and (B) a resin that contains the residue (c) of a compound having an ionization potential value lower than that of phenol and when acted on by an acid, exhibits an increased solubility in an alkali developer, wherein Ar represents an aromatic ring having Cy groups and optionally further other substituents, n is an integer of 2 or greater, Cy represents a group having a substituted or unsubstituted alkyl group or a group having a substituted or unsubstituted cycloaliphatic group, provided that a plurality of Cy groups may be identical with or different from each other, and M+ represents an organic onium ion.
摘要翻译： 根据一个实施方案，光化射线或辐射敏感性树脂组合物包含（A）下述通式（I）的任何化合物和（B）含有具有电离的化合物的残基（c）的树脂 电位值低于苯酚，当用酸作用时，在碱性显影剂中表现出增加的溶解度，其中Ar表示具有Cy基团和任选进一步其它取代基的芳环，n表示2以上的整数，Cy表示 具有取代或未取代的烷基的基团或具有取代或未取代的脂环族基团的基团，条件是多个Cy基团可以彼此相同或不同，M +表示有机鎓离子。
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4.发明申请ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD 有权化学敏感性或辐射敏感性树脂组合物，使用组合物和图案形成方法的耐腐蚀膜公开(公告)号：US20120301817A1
公开(公告)日：2012-11-29
申请号：US13575833
申请日：2011-01-27
IPC分类号： C08F261/02 , G03F1/50 , G03F7/20
CPC分类号： C08F8/00 , C08F8/02 , G03F7/0045 , G03F7/0046 , G03F7/0397 , C08F112/14
摘要： An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.
摘要翻译： 一种光化射线敏感或辐射敏感性树脂组合物，其包含（P）具有由下式（1）表示的重复单元的树脂，使用该组合物的抗蚀剂膜和图案形成方法。
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5.发明授权Chemical amplification resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition 有权化学放大抗蚀剂组合物，抗蚀剂膜，抗蚀剂涂布掩模板，抗蚀剂图案形成方法和光掩模均使用该组合物公开(公告)号：US08778593B2
公开(公告)日：2014-07-15
申请号：US13538216
申请日：2012-06-29
CPC分类号： C08F12/24 , C08F12/18 , C08F12/20 , C08F12/30 , C08F212/14 , C08F212/32 , C09D125/18 , G03F1/56 , G03F1/76 , G03F7/0382
摘要： A chemical amplification resist composition contains: (A) a polymer compound having a phenolic hydroxyl group and a group formed by substituting a substituent for a hydrogen atom of a hydroxyl group in a phenolic hydroxyl group and satisfying the following (a) to (c) at the same time: (a) the polydispersity is 1.2 or less, (b) the weight average molecular weight is from 2,000 to 6,500, and (c) the glass transition temperature (Tg) is 140° C. or more.
摘要翻译： 化学增幅抗蚀剂组合物含有：（A）具有酚羟基的高分子化合物和通过取代苯酚羟基中的羟基的氢原子取代基而形成的基团，并且满足以下（a）〜（c） 同时：（a）多分散性为1.2以下，（b）重均分子量为2000〜6,500，（c）玻璃化转变温度（Tg）为140℃以上。
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6.发明授权Negative resist pattern forming method, developer and negative chemical-amplification resist composition used therefor, and resist pattern 有权用于其的负抗蚀剂图案形成方法，显影剂和负极化学放大抗蚀剂组合物以及抗蚀剂图案公开(公告)号：US08637222B2
公开(公告)日：2014-01-28
申请号：US13146976
申请日：2010-01-29
IPC分类号： G03C5/00
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/325
摘要： A resist pattern forming method including in the following order, (1) a step of forming a film by using a negative chemical-amplification resist composition capable of undergoing negative conversion by a crosslinking reaction, (2) a step of exposing the film, and (4) a step of developing the exposed film by using a developer containing an organic solvent; a developer and a negative chemical-amplification resist composition used therefor; and a resist pattern formed by the pattern forming method.
摘要翻译： 一种抗蚀剂图案形成方法，包括以下顺序：（1）通过使用能够通过交联反应进行负转化的负性化学增幅抗蚀剂组合物形成膜的步骤，（2）曝光所述膜的步骤，以及 （4）通过使用含有有机溶剂的显影剂使曝光的膜显影的步骤; 用于此的显影剂和负化学放大抗蚀剂组合物; 以及通过图案形成方法形成的抗蚀剂图案。
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7.发明申请NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN 有权负极电阻图案形成方法，开发商和负极化学放大电阻组合物及其电阻图案公开(公告)号：US20110287234A1
公开(公告)日：2011-11-24
申请号：US13146976
申请日：2010-01-29
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/325
摘要： A resist pattern forming method including in the following order, (1) a step of forming a film by using a negative chemical-amplification resist composition capable of undergoing negative conversion by a crosslinking reaction, (2) a step of exposing the film, and (4) a step of developing the exposed film by using a developer containing an organic solvent; a developer and a negative chemical-amplification resist composition used therefor; and a resist pattern formed by the pattern forming method.
摘要翻译： 一种抗蚀剂图案形成方法，包括以下顺序：（1）通过使用能够通过交联反应进行负转化的负性化学增幅抗蚀剂组合物形成膜的步骤，（2）曝光所述膜的步骤，以及 （4）通过使用含有有机溶剂的显影剂使曝光的膜显影的步骤; 用于此的显影剂和负化学放大抗蚀剂组合物; 以及通过图案形成方法形成的抗蚀剂图案。
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8.发明申请公开(公告)号：US20080241745A1
公开(公告)日：2008-10-02
申请号：US12058329
申请日：2008-03-28
申请人： Koji Shirakawa , Tadateru Yatsuo
发明人： Koji Shirakawa , Tadateru Yatsuo
CPC分类号： G03F7/11 , C09D125/18 , G03F7/0382 , H01L21/0274 , H01L21/31144 , H01L21/32 , Y10S430/143
摘要： A negative resist composition, includes: (A) an alkali-soluble polymer containing a specific repeating unit as defined in the specification; (B) a crosslinking agent capable of crosslinking with the alkali soluble polymer (A) under an action of an acid; (C) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (D) a specific quaternary ammonium salt as defined in the specification; and (E) an organic carboxylic acid, and a pattern forming method uses the composition.
摘要翻译： 负光刻胶组合物包括：（A）含有本说明书中定义的特定重复单元的碱溶性聚合物; （B）能够在酸的作用下与碱溶性聚合物（A）交联的交联剂; （C）能够在光化射线或辐射照射时能够产生酸的化合物; （D）说明书中定义的特定季铵盐; 和（E）有机羧酸，并且图案形成方法使用该组合物。
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