发明授权
- 专利标题： Implantless dopant segregation for silicide contacts
- 专利标题（中）： 用于硅化物接触的无植入物掺杂剂分离
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申请号： US12833272申请日： 2010-07-09
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公开(公告)号： US08889537B2公开(公告)日： 2014-11-18
- 发明人: Cryil Cabral, Jr. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
- 申请人： Cryil Cabral, Jr. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Louis Percello
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L29/45
摘要：
A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.
公开/授权文献
- US20120009771A1 Implantless Dopant Segregation for Silicide Contacts 公开/授权日：2012-01-12
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