发明授权
- 专利标题: Optoelectronic semiconductor device and method of fabrication
- 专利标题(中): 光电半导体器件及其制造方法
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申请号: US12909064申请日: 2010-10-21
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公开(公告)号: US08896077B2公开(公告)日: 2014-11-25
- 发明人: Yi Cui , Jia Zhu , Ching-Mei Hsu , Shanhui Fan , Zongfu Yu
- 申请人: Yi Cui , Jia Zhu , Ching-Mei Hsu , Shanhui Fan , Zongfu Yu
- 申请人地址: US CA Palo Alto
- 专利权人: The Board of Trustees of the Leland Stanford Junior University
- 当前专利权人: The Board of Trustees of the Leland Stanford Junior University
- 当前专利权人地址: US CA Palo Alto
- 代理机构: Kaplan Breyer Schwarz & Ottesen, LLP
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232 ; H01L21/04 ; H01L31/0236 ; H01L31/0352
摘要:
An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.
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