发明授权
- 专利标题： Alignment mark and method of formation
- 专利标题（中）： 对齐标记和形成方法
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申请号： US12827563申请日： 2010-06-30
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公开(公告)号： US08896136B2公开(公告)日： 2014-11-25
- 发明人: Chen-Yu Tsai , Shih-Hui Wang , Chien-Ming Chiu , Chia-Ho Chen , Fang Wen Tsai , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
- 申请人： Chen-Yu Tsai , Shih-Hui Wang , Chien-Ming Chiu , Chia-Ho Chen , Fang Wen Tsai , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, LLP
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L29/40 ; H01L23/48 ; H01L23/52 ; H01L21/76 ; H01L21/00 ; H01L21/4763 ; H01L21/44 ; H01L21/683
摘要：
In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.
公开/授权文献
- US20120001337A1 Alignment Mark and Method of Formation 公开/授权日：2012-01-05
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