公开(公告)号：US08902561B2

公开(公告)日：2014-12-02

申请号：US13364463

申请日：2012-02-02

申请人： Chia-Ho Chen ,  Ming Huei Lien ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

发明人： Chia-Ho Chen ,  Ming Huei Lien ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H01L21/6831 ,  H02N13/00

摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.

摘要翻译： 用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。 电介质层具有由不同介电材料形成的场和一个或多个区域。 一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。 诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。 在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

公开(公告)号：US08884526B2

公开(公告)日：2014-11-11

申请号：US13354604

申请日：2012-01-20

申请人： Bo-Hung Lin ,  Ming-Chih Tsai ,  Chia-Ho Chen ,  Chung-En Kao

发明人： Bo-Hung Lin ,  Ming-Chih Tsai ,  Chia-Ho Chen ,  Chung-En Kao

IPC分类号： H01J7/24

CPC分类号： H01J37/32669

摘要： In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.

摘要翻译： 在一些实施例中，本公开涉及一种产生具有与工件尺寸无关的最大强度的磁场的等离子体处理系统。 等离子体处理系统具有多个侧面电磁体，其尺寸独立于工件尺寸。 侧面电磁体位于被配置为容纳半导体工件的处理室的周边周围。 当向侧面电磁铁提供电流时，分离的磁场从工件周围的分离位置发出。 单独的磁场有助于形成控制处理室内等离子体分布的整个磁场。 由于多个分离侧磁体的尺寸与工件尺寸无关，所以多个侧磁体可产生具有独立于工件尺寸的最大磁场强度的磁场。

公开(公告)号：US20120001337A1

公开(公告)日：2012-01-05

申请号：US12827563

申请日：2010-06-30

申请人： Chen-Yu Tsai ,  Shih-Hui Wang ,  Chien-Ming Chiu ,  Chia-Ho Chen ,  Fang Wen Tsai ,  Weng-Jin Wu ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Chen-Yu Tsai ,  Shih-Hui Wang ,  Chien-Ming Chiu ,  Chia-Ho Chen ,  Fang Wen Tsai ,  Weng-Jin Wu ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： H01L23/532 ,  H01L21/71 ,  H01L23/522

CPC分类号： H01L23/481 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2223/54426 ,  H01L2224/13

摘要： In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.

摘要翻译： 根据实施例，结构包括具有第一区域和第二区域的基板; 穿过基板的第一区域的贯穿基板通孔（TSV）; 在所述衬底的所述第二区域上方的隔离层，所述隔离层具有凹部; 以及在所述隔离层的所述凹部中的导电材料，所述隔离层设置在所述凹部中的所述导电材料和所述基板之间。

公开(公告)号：US09287154B2

公开(公告)日：2016-03-15

申请号：US13486025

申请日：2012-06-01

申请人： Ming Huei Lien ,  Chia-Ho Chen ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

发明人： Ming Huei Lien ,  Chia-Ho Chen ,  Shu-Fen Wu ,  Chih-Tsung Lee ,  You-Hua Chou

IPC分类号： H01L21/677 ,  H01L21/68 ,  H01L21/67 ,  H01L21/3105

CPC分类号： H01L21/6776 ,  H01L21/3105 ,  H01L21/67115

摘要： Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.

摘要翻译： 公开了用于处理诸如晶片的半导体衬底的紫外（UV）固化系统的实施例。 固化系统通常包括处理室，用于在室中保持晶片的晶片支撑件，设置在室上方的UV辐射源，以及散布在辐射源和晶片支撑件之间的UV透明窗口。 在一个实施例中，晶片支撑件由带式输送机提供，其可操作以在UV固化期间将晶片传送通过室。 在另一个实施例中，UV辐射源是可移动的灯单元，其移动穿过室的顶部以照射晶片。 在另一个实施方案中，UV透明窗口包括UV辐射调节剂，其降低位于调节剂下方的晶片部分上的UV辐射强度。 各种实施例通过使晶片上的UV强度水平归一化来增强晶片固化均匀性。

公开(公告)号：US08916480B2

公开(公告)日：2014-12-23

申请号：US13313106

申请日：2011-12-07

申请人： Ming-Shiou Kuo ,  Chih-Tsung Lee ,  You-Hua Chou ,  Ming-Chin Tsai ,  Chia-Ho Chen ,  Chin-Hsiang Lin

发明人： Ming-Shiou Kuo ,  Chih-Tsung Lee ,  You-Hua Chou ,  Ming-Chin Tsai ,  Chia-Ho Chen ,  Chin-Hsiang Lin

IPC分类号： H01L21/31

CPC分类号： C23C16/44 ,  C23C16/45565

摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.

摘要翻译： 本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。 一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓 。 组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。

公开(公告)号：US08896136B2

公开(公告)日：2014-11-25

申请号：US12827563

申请日：2010-06-30

申请人： Chen-Yu Tsai ,  Shih-Hui Wang ,  Chien-Ming Chiu ,  Chia-Ho Chen ,  Fang Wen Tsai ,  Weng-Jin Wu ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

发明人： Chen-Yu Tsai ,  Shih-Hui Wang ,  Chien-Ming Chiu ,  Chia-Ho Chen ,  Fang Wen Tsai ,  Weng-Jin Wu ,  Jing-Cheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng ,  Chen-Hua Yu

IPC分类号： H01L23/544 ,  H01L29/40 ,  H01L23/48 ,  H01L23/52 ,  H01L21/76 ,  H01L21/00 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/683

CPC分类号： H01L23/481 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2223/54426 ,  H01L2224/13

摘要： In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.

摘要翻译： 根据实施例，结构包括具有第一区域和第二区域的基板; 穿过基板的第一区域的贯穿基板通孔（TSV）; 在所述衬底的所述第二区域上方的隔离层，所述隔离层具有凹部; 以及在所述隔离层的所述凹部中的导电材料，所述隔离层设置在所述凹部中的所述导电材料和所述基板之间。

公开(公告)号：US20130187546A1

公开(公告)日：2013-07-25

申请号：US13354604

申请日：2012-01-20

申请人： Bo-Hung Lin ,  Ming-Chih Tsai ,  Chia-Ho Chen ,  Chung-En Kao

发明人： Bo-Hung Lin ,  Ming-Chih Tsai ,  Chia-Ho Chen ,  Chung-En Kao

IPC分类号： H05H1/04 ,  C23C16/50 ,  C23C16/52 ,  H01L21/3065

CPC分类号： H01J37/32669

摘要： In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.

摘要翻译： 在一些实施例中，本公开涉及一种产生具有与工件尺寸无关的最大强度的磁场的等离子体处理系统。 等离子体处理系统具有多个侧面电磁体，其尺寸独立于工件尺寸。 侧面电磁体位于被配置为容纳半导体工件的处理室的周边周围。 当向侧面电磁铁提供电流时，分离的磁场从工件周围的分离位置发出。 单独的磁场有助于形成控制处理室内等离子体分布的整个磁场。 由于多个分离侧磁体的尺寸与工件尺寸无关，所以多个侧磁体可产生具有独立于工件尺寸的最大磁场强度的磁场。

公开(公告)号：US09234278B2

公开(公告)日：2016-01-12

申请号：US13354545

申请日：2012-01-20

申请人： You-Hua Chou ,  Chih-Tsung Lee ,  Chia-Ho Chen ,  Chin-Hsiang Lin

发明人： You-Hua Chou ,  Chih-Tsung Lee ,  Chia-Ho Chen ,  Chin-Hsiang Lin

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/4405 ,  C23C16/45591

摘要： The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.

摘要翻译： 本公开涉及一种用于引导室内的气体流动的引导元件。 引导元件包括结构，一个或多个入口，出口和运输区域。 一个或多个入口形成在结构的第一侧上。 入口具有根据去除速率选择的入口尺寸并减轻腔室内的气体流量变化。 出口位于结构的第二侧，与结构的第一侧相对。 出口具有根据去除率选择的出口尺寸。 运输区域在结构内，并将进口连接或连接到出口。

公开(公告)号：US20130320235A1

公开(公告)日：2013-12-05

申请号：US13486025

申请日：2012-06-01

申请人： Ming Huei LIEN ,  Chia-Ho CHEN ,  Shu-Fen WU ,  Chih-Tsung LEE ,  You-Hua CHOU

发明人： Ming Huei LIEN ,  Chia-Ho CHEN ,  Shu-Fen WU ,  Chih-Tsung LEE ,  You-Hua CHOU

IPC分类号： G21K5/08

CPC分类号： H01L21/6776 ,  H01L21/3105 ,  H01L21/67115

摘要： Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.

摘要翻译： 公开了用于处理诸如晶片的半导体衬底的紫外（UV）固化系统的实施例。 固化系统通常包括处理室，用于在室中保持晶片的晶片支撑件，设置在室上方的UV辐射源，以及散布在辐射源和晶片支撑件之间的UV透明窗口。 在一个实施例中，晶片支撑件由带式输送机提供，其可操作以在UV固化期间将晶片传送通过室。 在另一个实施例中，UV辐射源是可移动的灯单元，其移动穿过室的顶部以照射晶片。 在另一个实施方案中，UV透明窗口包括UV辐射调节剂，其降低位于调节剂下方的晶片部分上的UV辐射强度。 各种实施例通过使晶片上的UV强度水平归一化来增强晶片固化均匀性。

公开(公告)号：US20130239889A1

公开(公告)日：2013-09-19

申请号：US13419835

申请日：2012-03-14

申请人： Ming Huei LIEN ,  Chia-Ho CHEN ,  Shu-Fen WU ,  Chih-Tsung LEE ,  You-Hua CHOU

发明人： Ming Huei LIEN ,  Chia-Ho CHEN ,  Shu-Fen WU ,  Chih-Tsung LEE ,  You-Hua CHOU

IPC分类号： C23C16/00 ,  F24F7/00

CPC分类号： C23C16/54 ,  C23C16/4405 ,  C23C16/4408 ,  H01L21/67126

摘要： A semiconductor manufacturing tool and method for operating the tool are provided. The semiconductor manufacturing tool includes a process chamber in which plasma operations or ion etching operations are carried out and a valve assembly for opening and closing a valve that provides for loading and unloading substrates into and out of, the semiconductor manufacturing tool. While a processing operation is being carried out in the chamber, a valve assembly purge operation also takes place. The valve assembly purge operation involves inert gases being directed to the valve assembly area to prevent the buildup of particles and contaminating films in the valve assembly. Because the valve assembly is maintained in a clean condition, particle contamination is reduced or eliminated.

摘要翻译： 提供了一种用于操作该工具的半导体制造工具和方法。 半导体制造工具包括其中执行等离子体操作或离子蚀刻操作的处理室和用于打开和关闭提供用于将衬底加载和卸载到半导体制造工具中的阀的阀组件。 当在腔室中进行处理操作时，也发生阀组件清洗操作。 阀组件清洗操作涉及惰性气体被引导到阀组件区域，以防止阀组件中的颗粒和污染膜的积聚。 因为阀组件保持在清洁状态，颗粒污染被减少或消除。