Invention Grant
- Patent Title: Alignment mark and method of formation
- Patent Title (中): 对齐标记和形成方法
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Application No.: US12827563Application Date: 2010-06-30
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Publication No.: US08896136B2Publication Date: 2014-11-25
- Inventor: Chen-Yu Tsai , Shih-Hui Wang , Chien-Ming Chiu , Chia-Ho Chen , Fang Wen Tsai , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
- Applicant: Chen-Yu Tsai , Shih-Hui Wang , Chien-Ming Chiu , Chia-Ho Chen , Fang Wen Tsai , Weng-Jin Wu , Jing-Cheng Lin , Wen-Chih Chiou , Shin-Puu Jeng , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, LLP
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L29/40 ; H01L23/48 ; H01L23/52 ; H01L21/76 ; H01L21/00 ; H01L21/4763 ; H01L21/44 ; H01L21/683
Abstract:
In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the substrate; an isolation layer over the second area of the substrate, the isolation layer having a recess; and a conductive material in the recess of the isolation layer, the isolation layer being disposed between the conductive material and the substrate in the recess.
Public/Granted literature
- US20120001337A1 Alignment Mark and Method of Formation Public/Granted day:2012-01-05
Information query
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