发明授权
- 专利标题： Vertical transistor in semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体器件中的垂直晶体管及其制造方法
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申请号： US13792231申请日： 2013-03-11
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公开(公告)号： US08901631B2公开(公告)日： 2014-12-02
- 发明人: Sheng-Wei Yang , Ying-Cheng Chuang , Shyam Surthi
- 申请人： Sheng-Wei Yang , Ying-Cheng Chuang , Shyam Surthi
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 代理机构： Jianq Chyun IP Office
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L29/06 ; H01L21/765
摘要：
Provided is a method for fabricating a semiconductor device, including the following steps. A substrate having a plurality of pillars is provided, wherein a plurality of trenches are formed around each pillar. A doped region is formed in the substrate and below each pillar. The doped region below each trench is removed to form an opening such that the doped regions below the adjacent pillars are separated from each other. A shielding layer is formed in each opening.
公开/授权文献
- US20140252532A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2014-09-11
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