发明授权
US08906193B2 Gas supply unit, substrate processing apparatus and supply gas setting method
有权
气体供应单元,基板处理装置和供气设定方法
- 专利标题: Gas supply unit, substrate processing apparatus and supply gas setting method
- 专利标题(中): 气体供应单元,基板处理装置和供气设定方法
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申请号: US12651165申请日: 2009-12-31
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公开(公告)号: US08906193B2公开(公告)日: 2014-12-09
- 发明人: Kenetsu Mizusawa , Keiki Ito , Masahide Itoh
- 申请人: Kenetsu Mizusawa , Keiki Ito , Masahide Itoh
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2004-357292 20041209
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23F1/00 ; H01L21/306 ; F17D1/04 ; G05D11/13
摘要:
A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.
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