Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14012324Application Date: 2013-08-28
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Publication No.: US08907460B2Publication Date: 2014-12-09
- Inventor: Takasuke Hashimoto , Shinichi Uchida , Yasutaka Nakashiba , Takatsugu Nemoto
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-205722 20120919
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/522 ; H01L23/58 ; H05K9/00

Abstract:
To suppress the noise caused by an inductor leaks to the outside, and also to be configured such that magnetic field intensity change reaches the inductor. An inductor surrounds an internal circuit in a planar view and also is coupled electrically to the internal circuit. The upper side of the inductor is covered by an upper shield part and the lower side of the inductor is covered by a lower shield part. The upper shield part is formed by the use of a multilayered wiring layer. The upper shield part has plural first openings. The first opening overlaps the inductor in the planar view.
Public/Granted literature
- US20140078709A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-03-20
Information query
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