Invention Grant
- Patent Title: Wafer grounding and biasing method, apparatus, and application
- Patent Title (中): 晶圆接地和偏置方法,装置和应用
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Application No.: US12552270Application Date: 2009-09-01
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Publication No.: US08908348B2Publication Date: 2014-12-09
- Inventor: Yi-Xiang Wang , Juying Dou , Kenichi Kanai
- Applicant: Yi-Xiang Wang , Juying Dou , Kenichi Kanai
- Applicant Address: TW Hsin-Chu
- Assignee: Hermes Microvision, Inc.
- Current Assignee: Hermes Microvision, Inc.
- Current Assignee Address: TW Hsin-Chu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01J37/317 ; H01J37/20 ; H01J37/28 ; B82Y10/00 ; B82Y40/00

Abstract:
A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A grounding pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the grounding pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount.
Public/Granted literature
- US20110051306A1 WAFER GROUNDING AND BIASING METHOD, APPARATUS, AND APPLICATION Public/Granted day:2011-03-03
Information query
IPC分类: