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    Wafer grounding and biasing method, apparatus, and application
    2.
    发明授权
    Wafer grounding and biasing method, apparatus, and application 有权
    晶圆接地和偏置方法，装置和应用

    公开(公告)号：US08908348B2

    公开(公告)日：2014-12-09

    申请号：US12552270

    申请日：2009-09-01

    Applicant: Yi-Xiang Wang ,  Juying Dou ,  Kenichi Kanai

    Inventor： Yi-Xiang Wang ,  Juying Dou ,  Kenichi Kanai

    IPC: H01L21/683 ,  H01J37/317 ,  H01J37/20 ,  H01J37/28 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: H01J37/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/28 ,  H01J37/3174 ,  H01J2237/0044 ,  H01J2237/2008

    Abstract: A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A grounding pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the grounding pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount.

    Abstract translation: 公开了适用于带电粒子束装置的晶片接地装置和方法。 晶片基板由晶片支架支撑。 接地销布置成与形成在晶片衬底的背面上的背面膜接触。 接地脉冲发生器提供至少一个脉冲来驱动接地引脚，使得在背面薄膜处发生的电介质击穿导致建立通过背面薄膜的电流路径。 因此，电流通过该电流路径流过晶片衬底，然后通过由晶片衬底和晶片座之间的电容耦合形成的至少一个电流返回路径流出晶片衬底。

    THERMAL FIELD EMISSION CATHODE
    5.
    发明申请
    THERMAL FIELD EMISSION CATHODE 有权
    热场发射阴极

    公开(公告)号：US20090315444A1

    公开(公告)日：2009-12-24

    申请号：US12145036

    申请日：2008-06-24

    Applicant: Zhong-Wei Chen ,  Juying Dou

    Inventor： Zhong-Wei Chen ,  Juying Dou

    IPC: H01J19/24

    CPC classification number: H01J37/063 ,  H01J1/16 ,  H01J3/027 ,  H01J37/065 ,  H01J2237/06316 ,  H01J2237/06375

    Abstract: A thermal field emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source is disclosed. Embodiments disclose changing coating shape, coating position and shorten emitter length to extend the lifetime of the field emission cathode.

    Abstract translation: 公开了一种在电子显微镜中使用的热场发射阴极，临界尺寸检查工具，电子束光刻机，电子束测试仪和其他电子束相关系统作为电子源。 实施例公开了改变涂层形状，涂层位置和缩短发射极长度以延长场致发射阴极的寿命。

    ELECTRON BEAM APPARATUS
    6.
    发明申请
    ELECTRON BEAM APPARATUS 失效
    电子束设备

    公开(公告)号：US20090294664A1

    公开(公告)日：2009-12-03

    申请号：US12130879

    申请日：2008-05-30

    Applicant: Zhong-Wei Chen ,  Xuedong Liu ,  Xu Zhang ,  Weiming Ren ,  Juying Dou

    Inventor： Zhong-Wei Chen ,  Xuedong Liu ,  Xu Zhang ,  Weiming Ren ,  Juying Dou

    IPC: G01N23/00

    CPC classification number: H01J37/28 ,  H01J37/141 ,  H01J2237/0475 ,  H01J2237/1035

    Abstract: The present invention includes an electron beam device for examining defects on semiconductor devices. The device includes an electron source for generating a primary electron beam, wherein the total acceleration potential is divided and is provided across the ground potential. Also included is at least one condenser lens for pre-focusing the primary electron beam, an aperture for confining the primary electron beam to ameliorate electron-electron interaction, wherein the aperture is positioned right underneath the last condenser lens, and a SORIL objective lens system for forming immersion magnetic field and electrostatic field to focus the primary beam onto the specimen in the electron beam path. A pair of grounding rings for providing virtual ground voltage potential to those components within the electron beam apparatus installed below a source anode and above a last polepiece of the SORIL objective lens.

    Abstract translation: 本发明包括用于检查半导体器件上的缺陷的电子束装置。 该装置包括用于产生一次电子束的电子源，其中总加速电位被分开并提供在地电位之间。 还包括至少一个用于预聚焦一次电子束的聚光透镜，用于限制一次电子束以改善电子 - 电子相互作用的孔，其中孔位于最后的聚光透镜的正下方，以及SORIL物镜系统 用于形成浸没磁场和静电场，以将主光束聚焦在电子束路径中的样本上。 一对接地环，用于为安装在源极阳极和SORIL物镜的最后一个极点之上的电子束装置内的那些部件提供虚拟接地电压电位。

    Electron beam apparatus
    7.
    发明授权
    Electron beam apparatus 失效
    电子束装置

    公开(公告)号：US07759653B2

    公开(公告)日：2010-07-20

    申请号：US12130879

    申请日：2008-05-30

    Applicant: Zhong-Wei Chen ,  Xuedong Liu ,  Xu Zhang ,  Weiming Ren ,  Juying Dou

    Inventor： Zhong-Wei Chen ,  Xuedong Liu ,  Xu Zhang ,  Weiming Ren ,  Juying Dou

    IPC: H01J37/00 ,  H01J37/28

    CPC classification number: H01J37/28 ,  H01J37/141 ,  H01J2237/0475 ,  H01J2237/1035

    Abstract: The present invention includes an electron beam device for examining defects on semiconductor devices. The device includes an electron source for generating a primary electron beam, wherein the total acceleration potential is divided and is provided across the ground potential. Also included is at least one condenser lens for pre-focusing the primary electron beam, an aperture for confining the primary electron beam to ameliorate electron-electron interaction, wherein the aperture is positioned right underneath the last condenser lens, and a SORIL objective lens system for forming immersion magnetic field and electrostatic field to focus the primary beam onto the specimen in the electron beam path. A pair of grounding rings for providing virtual ground voltage potential to those components within the electron beam apparatus installed below a source anode and above a last polepiece of the SORIL objective lens.

    Abstract translation: 本发明包括用于检查半导体器件上的缺陷的电子束装置。 该装置包括用于产生一次电子束的电子源，其中总加速电位被分开并提供在地电位之间。 还包括至少一个用于预聚焦一次电子束的聚光透镜，用于限制一次电子束以改善电子 - 电子相互作用的孔，其中孔位于最后的聚光透镜的正下方，以及SORIL物镜系统 用于形成浸没磁场和静电场，以将主光束聚焦在电子束路径中的样本上。 一对接地环，用于为安装在源极阳极和SORIL物镜的最后一个极点之上的电子束装置内的那些部件提供虚拟接地电压电位。

    Filament for electron source
    8.
    发明授权
    Filament for electron source 有权
    电子源灯丝

    公开(公告)号：US08896195B2

    公开(公告)日：2014-11-25

    申请号：US12909745

    申请日：2010-10-21

    Applicant: Juying Dou

    Inventor： Juying Dou

    IPC: H01J1/15 ,  H01J19/08 ,  H01K1/02 ,  H01J37/065

    CPC classification number: H01J1/15 ,  H01J37/065 ,  H01J2237/0216 ,  H01J2237/061 ,  H01J2237/06316

    Abstract: This invention relates to a filament for electron emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source. Embodiments of the present invention discloses method with which a Re (Rhenium) is used as heat source such that vibration issue of prior tungsten filament can be depressed.

    Abstract translation: 本发明涉及一种用于电子显微镜，临界尺寸检测工具，电子束光刻机，电子束测试仪和其他电子束相关系统作为电子源的电子发射阴极灯丝。 本发明的实施例公开了使用Re（铼）作为热源的方法，使得可以抑制现有钨丝的振动发生。

    Thermal field emission cathode
    9.
    发明授权
    Thermal field emission cathode 有权
    热场发射阴极

    公开(公告)号：US08022609B2

    公开(公告)日：2011-09-20

    申请号：US12145036

    申请日：2008-06-24

    Applicant: Zhong-Wei Chen ,  Juying Dou

    Inventor： Zhong-Wei Chen ,  Juying Dou

    IPC: H01J1/14 ,  H01J19/08

    CPC classification number: H01J37/063 ,  H01J1/16 ,  H01J3/027 ,  H01J37/065 ,  H01J2237/06316 ,  H01J2237/06375

    Abstract: A thermal field emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source is disclosed. Embodiments disclose changing coating shape, coating position and shorten emitter length to extend the lifetime of the field emission cathode.

    Abstract translation: 公开了一种在电子显微镜中使用的热场发射阴极，临界尺寸检查工具，电子束光刻机，电子束测试仪和其他电子束相关系统作为电子源。 实施例公开了改变涂层形状，涂层位置和缩短发射极长度以延长场致发射阴极的寿命。

    Electron beam apparatus
    10.
    发明授权
    Electron beam apparatus 有权
    电子束装置

    公开(公告)号：US07960697B2

    公开(公告)日：2011-06-14

    申请号：US12257304

    申请日：2008-10-23

    Applicant: Zhongwei Chen ,  Weiming Ren ,  Joe Wang ,  Xuedong Liu ,  Juying Dou ,  Fumin He ,  Feng Cao ,  Yan Ren ,  Xiaoli Guo ,  Wei He ,  Qingpo Xi

    Inventor： Zhongwei Chen ,  Weiming Ren ,  Joe Wang ,  Xuedong Liu ,  Juying Dou ,  Fumin He ,  Feng Cao ,  Yan Ren ,  Xiaoli Guo ,  Wei He ,  Qingpo Xi

    IPC: H01J49/44

    CPC classification number: H01J37/073 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/06341 ,  H01J2237/24592

    Abstract: The present invention relates to a charged particle beam apparatus which employs a scanning electron microscope for sample inspection and defect review.The present invent provides solution of improving imaging resolution by utilizing a field emission cathode tip with a large tip radius, applying a large accelerating voltage across ground potential between the cathode and anode, positioning the beam limit aperture before condenser lens, utilizing condenser lens excitation current to optimize image resolution, applying a high tube bias to shorten electron travel time, adopting and modifying SORIL objective lens to ameliorate aberration at large field of view and under electric drifting and reduce the urgency of water cooling objective lens while operating material analysis.The present invent provides solution of improving throughput by utilizing fast scanning ability of SORIL and providing a large voltage difference between sample and detectors.

    Abstract translation: 本发明涉及采用扫描电子显微镜进行样品检查和缺陷检查的带电粒子束装置。 本发明提供了通过利用具有大的尖端半径的场致发射阴极尖端来提高成像分辨率的解决方案，在阴极和阳极之间的地电位上施加大的加速电压，将光束极限孔定位在聚光透镜之前，利用聚光透镜激发电流 优化图像分辨率，应用高管偏压缩短电子行进时间，采用和修正SORIL物镜，以改善大视野和电漂移下的像差，并减少水冷物镜在操作材料分析时的紧迫性。 本发明提供了通过利用SORIL的快速扫描能力并在样品和检测器之间提供大的电压差来提高产量的解决方案。

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