发明授权
- 专利标题: Memory apparatus
- 专利标题(中): 存储设备
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申请号: US13471888申请日: 2012-05-15
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公开(公告)号: US08909895B2公开(公告)日: 2014-12-09
- 发明人: Jung-Been Im
- 申请人: Jung-Been Im
- 申请人地址: KR Suwon-Si, Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si, Gyeonggi-Do
- 代理机构: F. Chau & Associates, LLC
- 优先权: KR10-2011-0054143 20110603
- 主分类号: G06F9/26
- IPC分类号: G06F9/26 ; G06F3/06 ; G06F12/06
摘要:
A memory apparatus is provided. The memory apparatus includes a first memory chip, a second memory chip and a control unit configured to manage a first mapping table for the first memory chip and a second mapping table for the second memory chip. If a first physical address of the second memory chip is allocated to a first logical address of the first memory chip, the control unit is configured to update a second logical address of the second memory chip to correspond to the first physical address of the second memory chip in the second mapping table and update the first logical address of the first memory chip to correspond to the second logical address of the second memory chip in the first mapping table.
公开/授权文献
- US20120311238A1 MEMORY APPARATUS 公开/授权日:2012-12-06
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