Invention Grant
- Patent Title: Photovoltaic device including an intermediate layer
- Patent Title (中): 包括中间层的光伏器件
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Application No.: US12940955Application Date: 2010-11-05
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Publication No.: US08912432B2Publication Date: 2014-12-16
- Inventor: Isik C. Kizilyalli , Melissa J. Archer , Harry Atwater , Thomas J. Gmitter , Gang He , Andreas G. Hegedus , Gregg Higashi
- Applicant: Isik C. Kizilyalli , Melissa J. Archer , Harry Atwater , Thomas J. Gmitter , Gang He , Andreas G. Hegedus , Gregg Higashi
- Applicant Address: US CA Sunnyvale
- Assignee: Alta Devices, Inc.
- Current Assignee: Alta Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Sawyer Law Group, P.C.
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/0735

Abstract:
Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p+-doped layer adjacent to the n-doped layer to form a p-n layer such that electric energy is created when electromagnetic radiation is absorbed by the p-n layer. The n-doped layer and the p+-doped layer may compose an absorber layer having a thickness less than 500 nm. Such a thin absorber layer may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
Public/Granted literature
- US20110056546A1 THIN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE Public/Granted day:2011-03-10
Information query
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