发明授权
- 专利标题: Pattern forming method
- 专利标题(中): 图案形成方法
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申请号: US13528348申请日: 2012-06-20
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公开(公告)号: US08916053B2公开(公告)日: 2014-12-23
- 发明人: Yoshiaki Kawamonzen , Yasuaki Ootera , Akiko Yuzawa , Naoko Kihara , Yoshiyuki Kamata , Hiroyuki Hieda , Norikatsu Sasao , Ryosuke Yamamoto , Takeshi Okino , Tomoyuki Maeda , Takuya Shimada
- 申请人: Yoshiaki Kawamonzen , Yasuaki Ootera , Akiko Yuzawa , Naoko Kihara , Yoshiyuki Kamata , Hiroyuki Hieda , Norikatsu Sasao , Ryosuke Yamamoto , Takeshi Okino , Tomoyuki Maeda , Takuya Shimada
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Nixon & Vanderhye, P.C.
- 优先权: JP2011-209336 20110926
- 主分类号: C03C15/00
- IPC分类号: C03C15/00 ; C03C25/68 ; C23F1/00 ; B44C3/08 ; B44C5/04 ; B81C1/00 ; B44C1/22 ; H01L21/033 ; G03F7/00 ; B41M5/00
摘要:
A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.
公开/授权文献
- US20130075361A1 PATTERN FORMING METHOD 公开/授权日:2013-03-28
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