发明授权
US08916433B2 Superior integrity of high-k metal gate stacks by capping STI regions
有权
通过覆盖STI区域的高k金属栅极叠层的卓越完整性
- 专利标题： Superior integrity of high-k metal gate stacks by capping STI regions
- 专利标题（中）： 通过覆盖STI区域的高k金属栅极叠层的卓越完整性
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申请号： US13406869申请日： 2012-02-28
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公开(公告)号： US08916433B2公开(公告)日： 2014-12-23
- 发明人: Thilo Scheiper , Peter Baars , Sven Beyer
- 申请人： Thilo Scheiper , Peter Baars , Sven Beyer
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 优先权： DE102011004922 20110301
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/336 ; H01L21/76 ; H01L21/461 ; H01L21/8234 ; H01L21/28 ; H01L29/49 ; H01L29/51 ; H01L29/78 ; H01L29/10 ; H01L21/762
摘要：
When forming high-k metal gate electrode structures in an early manufacturing stage, integrity of an encapsulation and, thus, integrity of sensitive gate materials may be improved by reducing the surface topography of the isolation regions. To this end, a dielectric cap layer of superior etch resistivity is provided in combination with the conventional silicon dioxide material.
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