发明授权
- 专利标题： Magnetoresistive effect element, magnetic head, and magnetic disk apparatus
- 专利标题（中）： 磁阻效应元件，磁头和磁盘装置
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申请号： US11546975申请日： 2006-10-13
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公开(公告)号： US08917485B2公开(公告)日： 2014-12-23
- 发明人: Hideaki Fukuzawa , Yoshinari Kurosaki , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
- 申请人： Hideaki Fukuzawa , Yoshinari Kurosaki , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Nixon & Vanderhye, P.C.
- 优先权： JPP2006-086422 20060327
- 主分类号： G11B5/33
- IPC分类号： G11B5/33 ; G01R33/09 ; G11B5/39 ; G11C11/16 ; H01L43/08 ; H01F10/32 ; B82Y25/00 ; G11B5/455
摘要：
A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.