发明授权
- 专利标题： Plasma processing apparatus
- 专利标题（中）： 等离子体处理装置
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申请号： US12862915申请日： 2010-08-25
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公开(公告)号： US08920596B2公开(公告)日： 2014-12-30
- 发明人: Naoki Mihara , Naoki Matsumoto , Jun Yoshikawa , Kazuo Murakami
- 申请人： Naoki Mihara , Naoki Matsumoto , Jun Yoshikawa , Kazuo Murakami
- 申请人地址： JP
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP
- 代理机构： Cantor Colburn LLP
- 优先权： JP2009-202634 20090902
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01J37/32
摘要：
In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.
公开/授权文献
- US20110048642A1 PLASMA PROCESSING APPARATUS 公开/授权日：2011-03-03
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