Method and apparatus providing multi-step deposition of thin film layer

Invention Grant

US08921147B2 Method and apparatus providing multi-step deposition of thin film layer 有权

Title translation: 提供薄膜层多步沉积的方法和装置

Patent Title: Method and apparatus providing multi-step deposition of thin film layer
Patent Title (中): 提供薄膜层多步沉积的方法和装置
Application No.: US13966663

Application Date: 2013-08-14
Publication No.: US08921147B2

Publication Date: 2014-12-30
Inventor: Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
Applicant: First Solar, Inc.
Applicant Address: US OH Perrysburg
Assignee: First Solar, Inc.
Current Assignee: First Solar, Inc.
Current Assignee Address: US OH Perrysburg
Agency: Dickstein Shapiro LLP
Main IPC: H01L21/00
IPC: H01L21/00 ; H01L21/02 ; C23C14/22 ; C23C14/24 ; H01L31/18

Abstract:

A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.

Abstract(Chinese):

一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备