公开(公告)号：US20240247363A1

公开(公告)日：2024-07-25

申请号：US18628285

申请日：2024-04-05

Applicant: First Solar, Inc.

Inventor： Zhigang Ban ,  John Barden ,  Jerry Drennan ,  Litian Liu ,  Rick Powell ,  Nirav Vora ,  Yaojun Xu

IPC: C23C14/24

CPC classification number: C23C14/243

Abstract: Distributor assemblies for vapor transport deposition systems, and methods of conducting vapor transport deposition, are described.

公开(公告)号：US20200270744A1

公开(公告)日：2020-08-27

申请号：US16758258

申请日：2018-10-24

Applicant: First Solar, Inc.

Inventor： Zhigang Ban ,  John Barden ,  Jerry Drennan ,  Litian Liu ,  Rick Powell ,  Nirav Vora ,  Yaojun Xu

IPC: C23C14/24

Abstract: Distributor assemblies for vapor transport deposition systems, and methods of conducting vapor transport deposition, are described.

公开(公告)号：US09799784B2

公开(公告)日：2017-10-24

申请号：US14209740

申请日：2014-03-13

Applicant: FIRST SOLAR, INC

Inventor： Arnold Allenic ,  Zhigang Ban ,  Benyamin Buller ,  Markus Gloeckler ,  Benjamin Milliron ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Oomman K. Varghese ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.

公开(公告)号：US09337376B2

公开(公告)日：2016-05-10

申请号：US14551707

申请日：2014-11-24

Applicant: First Solar, Inc.

Inventor： Arnold Allenic ,  Zhigang Ban ,  John Barden ,  Benjamin Milliron ,  Rick C. Powell

IPC: H01L21/00 ,  H01L31/18 ,  C23C14/22 ,  H01L21/02 ,  C23C14/06 ,  C23C14/24 ,  H01L31/0296

CPC classification number: H01L31/1828 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/243 ,  C23C14/246 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02617 ,  H01L21/02631 ,  H01L31/02963

Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.

Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。

公开(公告)号：US20150079725A1

公开(公告)日：2015-03-19

申请号：US14551707

申请日：2014-11-24

Applicant: First Solar, Inc.

Inventor： Arnold Allenic ,  Zhigang Ban ,  John Barden ,  Benjamin Milliron ,  Rick C. Powell

IPC: H01L31/18 ,  H01L21/02 ,  H01L31/0296

CPC classification number: H01L31/1828 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/243 ,  C23C14/246 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02617 ,  H01L21/02631 ,  H01L31/02963

Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.

Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。

公开(公告)号：US08921147B2

公开(公告)日：2014-12-30

申请号：US13966663

申请日：2013-08-14

Applicant: First Solar, Inc.

Inventor： Arnold Allenic ,  Zhigang Ban ,  John Barden ,  Benjamin Milliron ,  Rick C. Powell

IPC: H01L21/00 ,  H01L21/02 ,  C23C14/22 ,  C23C14/24 ,  H01L31/18

CPC classification number: H01L31/1828 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/243 ,  C23C14/246 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02617 ,  H01L21/02631 ,  H01L31/02963

Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.

Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。

公开(公告)号：US20140261688A1

公开(公告)日：2014-09-18

申请号：US14209740

申请日：2014-03-13

Applicant: FIRST SOLAR, INC

Inventor： Arnold Allenic ,  Zhigang Ban ,  Benyamin Buller ,  Markus Gloeckler ,  Benjamin Milliron ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Oomman K. Varghese ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1-x) layer as are methods of forming such a photovoltaic device.

Abstract translation: 公开了包含至少一种硫镉碲化镉（CdSxTe1-x）层的光伏器件，以及形成这种光伏器件的方法。

公开(公告)号：US20140051206A1

公开(公告)日：2014-02-20

申请号：US13966663

申请日：2013-08-14

Applicant: First Solar, Inc

Inventor： Arnold Allenic ,  Zhigang Ban ,  John Barden ,  Benjamin Milliron ,  Rick C. Powell

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/243 ,  C23C14/246 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/0257 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02617 ,  H01L21/02631 ,  H01L31/02963

Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.

Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。