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公开(公告)号:US08785232B2
公开(公告)日:2014-07-22
申请号:US13945583
申请日:2013-07-18
Applicant: First Solar, Inc.
Inventor: Gang Xiong , Rick C. Powell , Aaron Roggelin , Kuntal Kumar , Arnold Allenic , Kenneth M. Ring , Charles E. Wickersham
IPC: H01L21/00
CPC classification number: H01L31/02963 , H01L31/073 , Y02E10/543 , Y02P70/521
Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.
Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法。 CdTe基光伏器件可以包括半导体层中的氧或硅。
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公开(公告)号:US09123584B2
公开(公告)日:2015-09-01
申请号:US14072406
申请日:2013-11-05
Applicant: FIRST SOLAR, INC.
Inventor: Arnold Allenic , Stephan Paul George, II , Sreenivas Jayaraman , Oleh Petro Karpenko , Chong Lim
CPC classification number: H01L22/12 , G01B11/0683 , G01N21/8422 , H01L2924/0002 , H01L2924/00
Abstract: A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.
Abstract translation: 用于在衬底上测量和空间映射半导体材料的计量系统可用于控制沉积和热激活过程。
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公开(公告)号:US20140065731A1
公开(公告)日:2014-03-06
申请号:US14072406
申请日:2013-11-05
Applicant: FIRST SOLAR, INC
Inventor: Arnold Allenic , Stephan Paul George, II , Sreenivas Jayaraman , Oleh Petro Karpenko , Chong Lim
IPC: H01L21/66
CPC classification number: H01L22/12 , G01B11/0683 , G01N21/8422 , H01L2924/0002 , H01L2924/00
Abstract: A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.
Abstract translation: 用于在衬底上测量和空间映射半导体材料的计量系统可用于控制沉积和热激活过程。
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公开(公告)号:US20130298992A1
公开(公告)日:2013-11-14
申请号:US13945583
申请日:2013-07-18
Applicant: First Solar, Inc.
Inventor: Gang Xiong , Rick C. Powell , Aaron Roggelin , Kuntal Kumar , Arnold Allenic , Kenneth M. Ring , Charles E. Wickersham
IPC: H01L31/0296
CPC classification number: H01L31/02963 , H01L31/073 , Y02E10/543 , Y02P70/521
Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.
Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法。 CdTe基光伏器件可以包括半导体层中的氧或硅。
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5.
公开(公告)号:US09799784B2
公开(公告)日:2017-10-24
申请号:US14209740
申请日:2014-03-13
Applicant: FIRST SOLAR, INC
Inventor: Arnold Allenic , Zhigang Ban , Benyamin Buller , Markus Gloeckler , Benjamin Milliron , Xilin Peng , Rick C. Powell , Jigish Trivedi , Oomman K. Varghese , Jianjun Wang , Zhibo Zhao
IPC: H01L31/0296 , H01L31/18 , H01L31/0392 , H01L31/073
CPC classification number: H01L31/0296 , H01L31/02963 , H01L31/02966 , H01L31/03925 , H01L31/073 , H01L31/18 , H01L31/1832 , Y02E10/543
Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.
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6.Method and apparatus providing multi-step deposition of thin film layer 有权
Title translation: 提供薄膜层多步沉积的方法和装置公开(公告)号:US09337376B2
公开(公告)日:2016-05-10
申请号:US14551707
申请日:2014-11-24
Applicant: First Solar, Inc.
Inventor: Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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7.METHOD AND SYSTEM OF PROVIDING DOPANT CONCENTRATION CONTROL IN DIFFERENT LAYERS OF A SEMICONDUCTOR DEVICE 审中-公开
Title translation: 在半导体器件的不同层中提供掺杂浓度控制的方法和系统公开(公告)号:US20150171258A1
公开(公告)日:2015-06-18
申请号:US14625649
申请日:2015-02-19
Applicant: First Solar, Inc.
Inventor: Arnold Allenic , John Barden , Feng Liao , Xilin Peng , Rick C. Powell , Kenneth M. Ring , Gang Xiong
IPC: H01L31/18 , C23C16/455 , H01J37/34 , C23C16/48 , C23C16/448 , C23C16/28 , C23C16/52 , C23C16/40
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。
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公开(公告)号:US20150155424A1
公开(公告)日:2015-06-04
申请号:US14617201
申请日:2015-02-09
Applicant: FIRST SOLAR, INC.
Inventor: Arnold Allenic , Viral Parikh , Rick C. Powell , Gang Xiong
IPC: H01L31/18 , H01L31/0224
CPC classification number: H01L31/1836 , H01L21/02474 , H01L21/02491 , H01L21/02505 , H01L21/02562 , H01L21/02587 , H01L21/02631 , H01L31/022441 , H01L31/022466
Abstract: In general, a photovoltaic module may include a binary semiconductor layer formed from a vapor rich in one component of a binary semiconductor source.
Abstract translation: 通常,光伏模块可以包括由富含二元半导体源的一个部件的蒸气形成的二元半导体层。
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9.Method and system of providing dopant concentration control in different layers of a semiconductor device 有权
Title translation: 在半导体器件的不同层中提供掺杂剂浓度控制的方法和系统公开(公告)号:US09006020B2
公开(公告)日:2015-04-14
申请号:US13739183
申请日:2013-01-11
Applicant: First Solar, Inc.
Inventor: Gang Xiong , Rick C. Powell , Xilin Peng , John Barden , Arnold Allenic , Feng Liao , Kenneth M. Ring
IPC: H01L31/18 , H01L21/02 , H01L31/0296 , H01L31/073
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。
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10.METHOD AND APPARATUS PROVIDING MULTI-STEP DEPOSITION OF THIN FILM LAYER 有权
Title translation: 提供薄膜层的多步沉积的方法和装置公开(公告)号:US20150079725A1
公开(公告)日:2015-03-19
申请号:US14551707
申请日:2014-11-24
Applicant: First Solar, Inc.
Inventor: Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
IPC: H01L31/18 , H01L21/02 , H01L31/0296
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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