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US08921161B2 Semiconductor device and method of forming EWLB package containing stacked semiconductor die electrically connected through conductive vias formed in encapsulant around die 有权
半导体器件和形成包含堆叠半导体管芯的EWLB封装的方法，其通过形成在管芯周围的密封剂中的导电通孔电连接

Semiconductor device and method of forming EWLB package containing stacked semiconductor die electrically connected through conductive vias formed in encapsulant around die
Abstract:
A semiconductor device has a first semiconductor die and first encapsulant deposited around the first semiconductor die. A first insulating layer is formed over the first semiconductor die and first encapsulant. A first conductive layer is formed over the first insulating layer and electrically connected to a contact pad of the first semiconductor die. A second semiconductor die is mounted to the first insulating layer and first conductive layer. A second encapsulant is deposited around the second semiconductor die. A second insulating layer is formed over the second semiconductor die and second encapsulant. A second conductive layer is formed over the second insulating layer and electrically connected to a contact pad of the second semiconductor die. A plurality of conductive vias is formed continuously through the first and second encapsulants outside a footprint of the first and second semiconductor die electrically connected to the first and second conductive layers.
Abstract(Chinese):

半导体器件具有第一半导体管芯和围绕第一半导体管芯沉积的第一密封剂。 在第一半导体管芯和第一密封剂上形成第一绝缘层。 第一导电层形成在第一绝缘层之上，并电连接到第一半导体管芯的接触焊盘。 第二半导体管芯安装到第一绝缘层和第一导电层。 第二密封剂沉积在第二半导体管芯周围。 在第二半导体管芯和第二密封剂上形成第二绝缘层。 第二导电层形成在第二绝缘层之上并电连接到第二半导体管芯的接触焊盘。 多个导电通孔连续地穿过电连接到第一和第二导电层的第一和第二半导体管芯的覆盖区之外的第一和第二密封剂形成。

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