Invention Grant
- Patent Title: Metal gate finFET device and method of fabricating thereof
- Patent Title (中): 金属栅finFET器件及其制造方法
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Application No.: US13475297Application Date: 2012-05-18
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Publication No.: US08921218B2Publication Date: 2014-12-30
- Inventor: Yu-Lin Yang , Tsu-Hsiu Perng , Chih Chieh Yeh , Li-Shyue Lai
- Applicant: Yu-Lin Yang , Tsu-Hsiu Perng , Chih Chieh Yeh , Li-Shyue Lai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L29/78
Abstract:
A method and device including a substrate having a fin. A metal gate structure is formed on the fin. The metal gate structure includes a stress metal layer formed on the fin such that the stress metal layer extends to a first height from an STI feature, the first height being greater than the fin height. A conduction metal layer is formed on the stress metal layer.
Public/Granted literature
- US20130307088A1 METAL GATE FINFET DEVICE AND METHOD OF FABRICATING THEREOF Public/Granted day:2013-11-21
Information query
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