Invention Grant
- Patent Title: Method of depositing a film
- Patent Title (中): 沉积薄膜的方法
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Application No.: US14134065Application Date: 2013-12-19
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Publication No.: US08921237B2Publication Date: 2014-12-30
- Inventor: Kentaro Oshimo , Masato Koakutsu , Hiroko Sasaki , Hiroaki Ikegawa
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2012-283175 20121226
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; H01L21/285 ; H01L21/687
Abstract:
A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.
Public/Granted literature
- US20140179104A1 METHOD OF DEPOSITING A FILM Public/Granted day:2014-06-26
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