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    Nozzle and substrate processing apparatus using same
    1.
    发明授权
    Nozzle and substrate processing apparatus using same 有权

    公开(公告)号：US10472719B2

    公开(公告)日：2019-11-12

    申请号：US14933123

    申请日：2015-11-05

    Applicant: Tokyo Electron Limited

    Inventor： Yu Wamura ,  Fumiaki Hayase ,  Masahiko Kaminishi ,  Kosuke Takahashi ,  Hiroko Sasaki ,  Yu Sasaki

    IPC: C23C16/455 ,  H01J37/32 ,  B05B1/20

    Abstract: A nozzle for supplying a fluid includes a tubular part including a tubular passage thereinside and a fluid discharge surface having a plurality of fluid discharge holes formed therein along a lengthwise direction of the tubular passage. A partition plate is provided in the tubular passage and extends along the lengthwise direction so as to partition the tubular passage into a first area including the fluid discharge surface and a second area without the fluid discharge surface. The partition plate has distribution holes whose number is less than a number of the plurality of fluid discharge holes in the lengthwise direction. A fluid introduction passage is in communication with the second area.

    Method of depositing a film
    2.
    发明授权
    Method of depositing a film 有权
    沉积薄膜的方法

    公开(公告)号：US08921237B2

    公开(公告)日：2014-12-30

    申请号：US14134065

    申请日：2013-12-19

    Applicant: Tokyo Electron Limited

    Inventor： Kentaro Oshimo ,  Masato Koakutsu ,  Hiroko Sasaki ,  Hiroaki Ikegawa

    IPC: H01L21/31 ,  H01L21/02 ,  H01L21/285 ,  H01L21/687

    CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/45551 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76841

    Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.

    Abstract translation: 一种使用原子层沉积（ALD）方法沉积膜的方法，同时旋转设置在室内的转盘并且包括可安装基板的基板安装部分，以使基板通过第一和第二处理区域 分别供应相互反应的不同气体，包括在晶片未安装在转台上的状态下将薄片涂覆在转盘上，转台旋转，基板安装部分具有预定温度; 以及在将晶片安装在转台上的状态下将薄膜沉积在晶片上的处理，转盘旋转，并且基板具有等于或小于预定温度的温度。

    METHOD OF DETOXIFYING EXHAUST PIPE AND FILM FORMING APPARATUS
    4.
    发明申请
    METHOD OF DETOXIFYING EXHAUST PIPE AND FILM FORMING APPARATUS 审中-公开
    去除排气管和膜成型装置的方法

    公开(公告)号：US20160220953A1

    公开(公告)日：2016-08-04

    申请号：US15003138

    申请日：2016-01-21

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Yu Wamura ,  Fumiaki Hayase ,  Masahiko Kaminishi ,  Kosuke Takahashi ,  Yu Sasaki ,  Hiroko Sasaki

    IPC: B01D53/76 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  B01D53/54 ,  C23C16/44

    CPC classification number: C23C16/4584 ,  B01D53/54 ,  B01D53/72 ,  B01D53/76 ,  B01D2251/104 ,  B01D2258/0216 ,  C23C16/4412 ,  C23C16/45551

    Abstract: A method of detoxifying an exhaust pipe in a film forming apparatus configured to supply a raw material gas contending a harmful component and a reaction gas capable of generating a harmless reaction product by reaction with the raw material gas into a process chamber to perform a film forming process on a substrate while independently exhausting the raw material gas and the reaction gas from a raw material exhaust pipe and a reaction gas exhaust pipe connected to the process chamber, respectively, is provided. The method includes supplying the reaction gas into the raw material exhaust pipe to detoxify an interior of the raw material exhaust pipe during a predetermined period in which the film forming apparatus is operated and the film forming process is not performed.

    Abstract translation: 一种成膜装置的排气管的方法，该成膜装置被配置为将与原料气体反应产生无害反应产物的能够产生有害成分的原料气体的反应气体供给到处理室，从而进行成膜 提供了分别从连接到处理室的原料排气管和反应气体排出管独立地排出原料气体和反应气体的基板上的工序。 该方法包括将原料排气管中的反应气体供给到原料排气管的内部，在成膜装置运转的规定期间内不进行成膜处理。

    Method of depositing film
    6.
    发明授权
    Method of depositing film 有权
    沉积膜的方法

    公开(公告)号：US09136133B2

    公开(公告)日：2015-09-15

    申请号：US14308880

    申请日：2014-06-19

    Applicant: Tokyo Electron Limited

    Inventor： Kentaro Oshimo ,  Masato Koakutsu ,  Hiroko Sasaki ,  Hiroaki Ikegawa

    IPC: H01L21/00 ,  H01L21/285 ,  H01L21/3205 ,  H01L49/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

    CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/32051 ,  H01L28/00

    Abstract: A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. A cycle time of the cycle is set equal to or shorter than 0.5 seconds.

    Abstract translation: 提供了一种沉积薄膜的方法。 在该方法中，依次提供彼此反应的第一处理气体和第二处理气体，以使第一处理气体和第二处理气体的反应产物的原子层或分子层沉积在基板上 一个室，通过重复一个循环，每循环一次地向基板依次提供第一处理气体和第二处理气体。 循环的循环时间设定为等于或小于0.5秒。

    METHOD OF DEPOSITING A FILM
    7.
    发明申请
    METHOD OF DEPOSITING A FILM 有权
    沉积膜的方法

    公开(公告)号：US20140179104A1

    公开(公告)日：2014-06-26

    申请号：US14134065

    申请日：2013-12-19

    Applicant: Tokyo Electron Limited

    Inventor： Kentaro Oshimo ,  Masato Koakutsu ,  Hiroko Sasaki ,  Hiroaki Ikegawa

    IPC: H01L21/02 ,  H01L21/687 ,  H01L21/285

    CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/45551 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76841

    Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.

    Abstract translation: 一种使用原子层沉积（ALD）方法沉积膜的方法，同时旋转设置在室内的转盘并且包括可安装基板的基板安装部分，以使基板通过第一和第二处理区域 分别供应相互反应的不同气体，包括在晶片未安装在转台上的状态下将薄片涂覆在转盘上，转台旋转，基板安装部分具有预定温度; 以及在将晶片安装在转台上的状态下将薄膜沉积在晶片上的处理，转盘旋转，并且基板具有等于或小于预定温度的温度。

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