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    Method of depositing a film
    1.
    发明授权
    Method of depositing a film 有权
    沉积薄膜的方法

    公开(公告)号：US08921237B2

    公开(公告)日：2014-12-30

    申请号：US14134065

    申请日：2013-12-19

    Applicant: Tokyo Electron Limited

    Inventor： Kentaro Oshimo ,  Masato Koakutsu ,  Hiroko Sasaki ,  Hiroaki Ikegawa

    IPC: H01L21/31 ,  H01L21/02 ,  H01L21/285 ,  H01L21/687

    CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/45551 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76841

    Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.

    Abstract translation: 一种使用原子层沉积（ALD）方法沉积膜的方法，同时旋转设置在室内的转盘并且包括可安装基板的基板安装部分，以使基板通过第一和第二处理区域 分别供应相互反应的不同气体，包括在晶片未安装在转台上的状态下将薄片涂覆在转盘上，转台旋转，基板安装部分具有预定温度; 以及在将晶片安装在转台上的状态下将薄膜沉积在晶片上的处理，转盘旋转，并且基板具有等于或小于预定温度的温度。

    Film forming method
    2.
    发明授权
    Film forming method 有权

    公开(公告)号：US10961623B2

    公开(公告)日：2021-03-30

    申请号：US16216181

    申请日：2018-12-11

    Applicant: Tokyo Electron Limited

    Inventor： Masato Koakutsu

    IPC: C23C16/458 ,  C23C16/455 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  C23C16/52

    Abstract: A film forming method forms a film including a predetermined element on substrates placed on a turntable, by supplying a first reaction gas including the predetermined element from a first supply part and supplying a second reaction gas from a second supply part in a raised state of the turntable, and rotating the turntable a predetermined number of times in a state in which the separation gas is supplied from a separation gas supply part, and performs an anneal process at least before or after the film forming process, by supplying the separation gas or the second reaction gas from the first supply part and supplying the separation gas or the second reaction gas from the second supply part in a lowered state of the turntable, and rotating the turntable at least once in a state in which the separation gas is supplied from the separation gas supply part.

    Method of cleaning exhaust pipe
    5.
    发明授权
    Method of cleaning exhaust pipe 有权

    公开(公告)号：US10975466B2

    公开(公告)日：2021-04-13

    申请号：US16120596

    申请日：2018-09-04

    Applicant: Tokyo Electron Limited

    Inventor： Takahito Umehara ,  Masato Koakutsu ,  Tsubasa Watanabe

    IPC: C23C16/02 ,  B08B5/00 ,  B08B9/027 ,  H01L21/67 ,  C23C16/44 ,  C23C16/34

    Abstract: There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas directly, from a cleaning gas supply part disposed near a joint between the processing chamber and the exhaust pipe, to the exhaust pipe without passing through the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.

    FILM DEPOSITION METHOD
    7.
    发明申请
    FILM DEPOSITION METHOD 审中-公开
    膜沉积法

    公开(公告)号：US20130164936A1

    公开(公告)日：2013-06-27

    申请号：US13726728

    申请日：2012-12-26

    Applicant: Tokyo Electron Limited

    Inventor： Kentaro OSHIMO ,  Masato Koakutsu

    IPC: H01L49/02

    CPC classification number: H01L28/60 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/68764 ,  H01L21/68771

    Abstract: A film deposition method includes a film depositing step of depositing titanium nitride on a substrate mounted on a substrate mounting portion of a turntable, which is rotatably provided in a vacuum chamber, by alternately exposing the substrate to a titanium containing gas and a nitrogen containing gas which is capable of reacting with the titanium containing gas while rotating the turntable; and an exposing step of exposing the substrate on which the titanium nitride is deposited to the nitrogen containing gas, the film depositing step and the exposing step being continuously repeated to deposit the titanium nitride of a desired thickness.

    Abstract translation: 薄膜沉积方法包括：通过将基板交替地暴露于含钛气体和含氮气体的方法，将氮化钛沉积在安装在转台的基板安装部分上的基板上，该薄膜沉积步骤可旋转地设置在真空室中 其能够在旋转所述转台的同时与所述含钛气体反应; 以及将其上沉积氮化钛的基板暴露于含氮气体的曝光步骤，连续重复膜沉积步骤和曝光步骤以沉积所需厚度的氮化钛。

    Method of depositing film
    8.
    发明授权
    Method of depositing film 有权
    沉积膜的方法

    公开(公告)号：US09136133B2

    公开(公告)日：2015-09-15

    申请号：US14308880

    申请日：2014-06-19

    Applicant: Tokyo Electron Limited

    Inventor： Kentaro Oshimo ,  Masato Koakutsu ,  Hiroko Sasaki ,  Hiroaki Ikegawa

    IPC: H01L21/00 ,  H01L21/285 ,  H01L21/3205 ,  H01L49/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

    CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/32051 ,  H01L28/00

    Abstract: A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. A cycle time of the cycle is set equal to or shorter than 0.5 seconds.

    Abstract translation: 提供了一种沉积薄膜的方法。 在该方法中，依次提供彼此反应的第一处理气体和第二处理气体，以使第一处理气体和第二处理气体的反应产物的原子层或分子层沉积在基板上 一个室，通过重复一个循环，每循环一次地向基板依次提供第一处理气体和第二处理气体。 循环的循环时间设定为等于或小于0.5秒。

    Method of depositing a film using a turntable apparatus
    9.
    发明授权
    Method of depositing a film using a turntable apparatus 有权
    使用转盘装置沉积膜的方法

    公开(公告)号：US08987147B2

    公开(公告)日：2015-03-24

    申请号：US14108663

    申请日：2013-12-17

    Applicant: Tokyo Electron Limited

    Inventor： Hiroaki Ikegawa ,  Masahiko Kaminishi ,  Kosuke Takahashi ,  Masato Koakutsu ,  Jun Ogawa

    IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687

    CPC classification number: H01L21/0228 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/02148 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/68764 ,  H01L21/68771

    Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.

    Abstract translation: 一种使用包括转台安装基板的设备在基板上沉积薄膜的方法，设置有气体供应部分的转盘上表面上方的第一和第二处理区域，在第一和第二处理区域之间的分离气体供应部分和 分离区域，包括通过旋转转盘第一匝来沉积第一氧化物膜，同时供应第一反应气体，来自第二气体供应部分的氧化气体和分离气体; 在从第一气体供给部分和分离气体供应部分供应分离气体的同时旋转至少一圈，并且来自第二气体供应部分的氧化气体; 并且至少第二匝旋转以沉积第二氧化物膜，同时从第一气体供应部分提供第二反应气体，来自第二气体供应部分的氧化气体和分离气体。

    METHOD OF DEPOSITING A FILM
    10.
    发明申请
    METHOD OF DEPOSITING A FILM 有权
    沉积膜的方法

    公开(公告)号：US20140179104A1

    公开(公告)日：2014-06-26

    申请号：US14134065

    申请日：2013-12-19

    Applicant: Tokyo Electron Limited

    Inventor： Kentaro Oshimo ,  Masato Koakutsu ,  Hiroko Sasaki ,  Hiroaki Ikegawa

    IPC: H01L21/02 ,  H01L21/687 ,  H01L21/285

    CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/45551 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76841

    Abstract: A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.

    Abstract translation: 一种使用原子层沉积（ALD）方法沉积膜的方法，同时旋转设置在室内的转盘并且包括可安装基板的基板安装部分，以使基板通过第一和第二处理区域 分别供应相互反应的不同气体，包括在晶片未安装在转台上的状态下将薄片涂覆在转盘上，转台旋转，基板安装部分具有预定温度; 以及在将晶片安装在转台上的状态下将薄膜沉积在晶片上的处理，转盘旋转，并且基板具有等于或小于预定温度的温度。

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