发明授权
US08921867B2 Thin-film transistor, display panel, and method for producing a thin-film transistor
有权
薄膜晶体管，显示面板以及薄膜晶体管的制造方法
- 专利标题： Thin-film transistor, display panel, and method for producing a thin-film transistor
- 专利标题（中）： 薄膜晶体管，显示面板以及薄膜晶体管的制造方法
-
申请号： US14130940申请日： 2013-06-05
-
公开(公告)号： US08921867B2公开(公告)日： 2014-12-30
- 发明人: Yuko Okumoto , Akihito Miyamoto
- 申请人： Panasonic Corporation
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Greenblum & Bernstein, P.L.C.
- 优先权： JP2012-131318 20120608
- 国际申请： PCT/JP2013/003528 WO 20130605
- 国际公布： WO2013/183289 WO 20131212
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L51/00 ; H01L21/00 ; H01L21/332 ; H01L51/40 ; H01L51/05 ; H01L29/786 ; H01L27/32
摘要：
A thin-film transistor including: a gate electrode that is located above a substrate; a gate insulating layer that faces the gate electrode; a partition that defines an opening and has higher liquid repellency than liquid repellency of the gate insulating layer, the opening having a surface of the gate insulating layer therewithin; a semiconductor layer that faces the gate electrode with the gate insulating layer interposed therebetween and is formed within the opening by an application method; a source electrode and a drain electrode that are electrically connected to the semiconductor layer; and an intermediate layer that is made of the same material as a material of the partition and is located between the gate insulating layer and the semiconductor layer, wherein the intermediate layer is discretely present above the gate insulating layer.