公开(公告)号：US09024449B2

公开(公告)日：2015-05-05

申请号：US14059559

申请日：2013-10-22

申请人： Panasonic Corporation

发明人： Yuko Okumoto ,  Akihito Miyamoto ,  Takaaki Ukeda

IPC分类号： H01L29/40 ,  H01L21/4763 ,  H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L51/05 ,  H01L51/56

CPC分类号： H01L51/52 ,  H01L27/1292 ,  H01L27/3248 ,  H01L27/3274 ,  H01L51/0512 ,  H01L51/0558 ,  H01L51/56

摘要： A thin film transistor element includes: a gate electrode; a source electrode and a drain electrode; an insulating layer; partition walls; and an organic semiconductor layer. The partition walls define a first aperture. Within the first aperture, at least a part of the source electrode and at least a part of the drain electrode are in contact with the semiconductor layer. The partition walls have side face portions facing the first aperture, and some of the side face portions have gentler slopes than the rest of the side face portions.

摘要翻译： 薄膜晶体管元件包括：栅电极; 源电极和漏电极; 绝缘层; 隔墙; 和有机半导体层。 分隔壁限定第一孔。 在第一孔内，源电极的至少一部分和漏电极的至少一部分与半导体层接触。 分隔壁具有面向第一孔的侧面部分，并且一些侧面部分具有比其余侧面部分更平缓的倾斜度。

公开(公告)号：US09620731B2

公开(公告)日：2017-04-11

申请号：US14034949

申请日：2013-09-24

申请人： PANASONIC CORPORATION

发明人： Takaaki Ukeda ,  Akihito Miyamoto ,  Norishige Nanai

IPC分类号： H01L51/52 ,  H01L51/05 ,  H01L29/51 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L51/5203 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/511 ,  H01L29/512 ,  H01L29/66742 ,  H01L29/786 ,  H01L51/0516 ,  H01L51/052 ,  H01L51/0525 ,  H01L51/0537 ,  H01L51/0545 ,  H01L51/055

摘要： A thin film transistor according to the present disclosure including: a gate electrode above a substrate; a gate insulating layer covering the gate electrode; a semiconductor layer above the gate insulating layer; and a source electrode and a drain electrode which are above the gate insulating layer, and electrically connected to the semiconductor layer, in which the gate insulating layer includes a first area and a second area, the first area being above the gate electrode, the second area being different from an area above the gate electrode, and made of a same substance as the first area, and the first area has a higher density than a density of the second area.

公开(公告)号：US09024319B2

公开(公告)日：2015-05-05

申请号：US13968549

申请日：2013-08-16

申请人： Panasonic Corporation

发明人： Yuko Okumoto ,  Akihito Miyamoto ,  Takaaki Ukeda

IPC分类号： H01L31/00 ,  H01L27/12 ,  H01L27/32 ,  H01L51/10 ,  H01L29/66 ,  H01L51/05

CPC分类号： H01L27/1214 ,  H01L27/1225 ,  H01L27/1292 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/66765 ,  H01L51/0545 ,  H01L51/105

摘要： A thin film transistor element is formed in each of adjacent first and second apertures defined by partition walls. In plan view of a bottom portion of the first aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction opposite a direction of the second aperture, and in plan view of a bottom portion of the second aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction opposite a direction of the first aperture.

摘要翻译： 在由分隔壁限定的相邻的第一和第二孔中的每一个中形成薄膜晶体管元件。 在第一孔的底部的平面图中，源电极部分和漏电极部分的总面积的中心在与第二孔径的方向相反的方向上偏离底部区域的中心 并且在第二孔的底部的平面图中，源电极部分和漏极电极部分的总面积的中心在与底部部分的方向相反的方向上偏离底部区域的中心 第一光圈。

公开(公告)号：US09112162B2

公开(公告)日：2015-08-18

申请号：US14551564

申请日：2014-11-24

申请人： PANASONIC CORPORATION

发明人： Akihito Miyamoto ,  Yuko Okumoto

IPC分类号： H01L51/40 ,  H01L51/05 ,  H01L29/786 ,  H01L51/50 ,  H01L51/00 ,  H01L27/32

CPC分类号： H01L51/0545 ,  H01L27/1225 ,  H01L27/1292 ,  H01L27/3246 ,  H01L27/3274 ,  H01L29/786 ,  H01L29/7869 ,  H01L51/0004 ,  H01L51/0036 ,  H01L51/0078 ,  H01L51/0525 ,  H01L51/5088

摘要： An electronic device including: a substrate; a bank formed on an upper surface of the substrate, surrounding an area of the upper surface of the substrate, and defining an aperture from which the area is exposed; a liquid-philic layer formed on a peripheral portion of the area, and not overlapping a central portion of the area; a semiconductor layer formed within the aperture, and attaching to at least a portion of the central portion and to an upper surface of the liquid-philic layer; and a pair of electrodes that are in contact with an area of the semiconductor layer, the area of the semiconductor layer not overlapping the liquid-philic layer in plan view. The bank has a liquid-phobic lateral surface surrounding the aperture, and the upper surface of the liquid-philic layer has a higher degree of liquid-philicity than the upper surface of the substrate.

摘要翻译： 一种电子设备，包括：基板; 形成在所述基板的上表面上的堤，围绕所述基板的上表面的区域，并且限定所述区域暴露的孔; 形成在所述区域的周边部分上并且不与所述区域的中心部分重叠的液体亲水层; 形成在所述孔内的半导体层，并且附着到所述中央部分和所述液体亲水层的上表面的至少一部分; 以及与半导体层的区域接触的一对电极，在平面图中半导体层的区域不与液体层重叠。 堤岸具有围绕孔的疏液侧面，液相层的上表面比基板的上表面具有更高的液体亲和性。

公开(公告)号：US08969884B2

公开(公告)日：2015-03-03

申请号：US13968571

申请日：2013-08-16

申请人： Panasonic Corporation

发明人： Yuko Okumoto ,  Akihito Miyamoto ,  Takaaki Ukeda

IPC分类号： H01L27/15 ,  H01L21/00 ,  H01L27/32 ,  H01L51/00 ,  H01L51/10 ,  H01L27/28 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1368 ,  H01L51/05

CPC分类号： H01L27/32 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1292 ,  H01L27/283 ,  H01L27/3274 ,  H01L29/66765 ,  H01L51/0003 ,  H01L51/0545 ,  H01L51/105 ,  H01L2227/323 ,  H01L2251/5315

摘要： A thin film transistor element is formed in each of a first aperture and a second aperture defined by partition walls, which further define a third aperture that is adjacent to the first aperture with a gap therebetween and is located in a direction, from the first aperture, differing from a direction of the second aperture. In plan view, at a bottom portion of the first aperture, a center of area of a liquid-philic layer portion is offset from a center of area of the bottom portion in a direction differing from a direction of the third aperture, and at a bottom portion of one of the first and second apertures, a center of area of a liquid-philic layer portion is offset from a center of area of the bottom portion in a direction differing from a direction of the other one of the first and second apertures.

摘要翻译： 在由分隔壁限定的第一孔和第二孔中的每一个中形成薄膜晶体管元件，其进一步限定与第一孔邻近的第三孔，其间具有间隙，并且位于从第一孔 与第二孔的方向不同。 在平面图中，在第一孔的底部，液体亲属层部分的区域的中心在与第三孔的方向不同的方向上偏离底部区域的中心，并且在 第一和第二孔之一的底部，液体亲水层部分的区域的中心在与第一和第二孔的另一个的方向不同的方向上偏离底部区域的中心 。

公开(公告)号：US08946730B2

公开(公告)日：2015-02-03

申请号：US13968556

申请日：2013-08-16

申请人： Panasonic Corporation

发明人： Yuko Okumoto ,  Akihito Miyamoto ,  Takaaki Ukeda

IPC分类号： H01L27/15 ,  H01L21/00 ,  H01L29/786 ,  H01L27/32 ,  H01L51/10 ,  H01L27/12 ,  H01L29/66 ,  H01L51/52 ,  H01L51/05

CPC分类号： H01L29/78693 ,  H01L27/1225 ,  H01L27/1292 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/66742 ,  H01L51/0545 ,  H01L51/105 ,  H01L51/52

摘要： In a thin film transistor device, partition walls define first, second, and third apertures. In plan view, at a bottom portion of the first aperture, a center of a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction differing from a direction of the third aperture, and at a bottom portion of one of the first and second apertures, a center a total of areas of a source electrode portion and a drain electrode portion is offset from a center of area of the bottom portion in a direction differing from a direction of the other one of the first and second apertures.

摘要翻译： 在薄膜晶体管器件中，分隔壁限定第一，第二和第三孔。 在平面图中，在第一孔的底部，源电极部分和漏电极部分的总面积的中心在与底部部分的区域的中心不同的方向上偏离 第三孔，并且在第一孔和第二孔之一的底部处，源极电极部分和漏电极部分的总面积的中心在与底部部分的区域的中心不同的方向上偏离 第一和第二孔中另一个的方向。

公开(公告)号：US08941115B2

公开(公告)日：2015-01-27

申请号：US13968567

申请日：2013-08-16

申请人： Panasonic Corporation

发明人： Yuko Okumoto ,  Akihito Miyamoto ,  Takaaki Ukeda

IPC分类号： H01L31/036 ,  H01L29/04 ,  H01L27/15 ,  H01L21/00 ,  H01L51/40 ,  H01L51/52 ,  H01L27/12 ,  H01L51/56 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L51/5253 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1292 ,  H01L51/0004 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/56

摘要： A thin film transistor element includes a gate electrode, an insulating layer formed on the gate electrode, and partition walls formed on the insulating layer and defining a first aperture above the gate electrode. The thin film transistor element further includes, at a bottom portion of the first aperture, a source electrode and a drain electrode that are in alignment with each other with a gap therebetween, a liquid-philic layer, and a semiconductor layer that covers the source electrode, the drain electrode, and the liquid-philic layer as well as gaps therebetween. The liquid-philic layer has higher liquid philicity than the insulating layer, and in plan view of the bottom portion of the first aperture, a center of area of the liquid-philic layer is offset from a center of area of the bottom portion of the first aperture.

摘要翻译： 薄膜晶体管元件包括栅电极，形成在栅电极上的绝缘层，以及形成在绝缘层上并限定栅电极上方的第一孔的隔壁。 所述薄膜晶体管元件还包括在所述第一孔的底部具有彼此对准的源电极和漏电极，其间具有间隙，液体亲水层和覆盖所述源极的半导体层 电极，漏电极和液相层以及它们之间的间隙。 液体亲水层比绝缘层具有更高的液体容易性，在第一孔的底部的平面图中，液体亲水层的面积中心偏离了底部的区域的中心 第一光圈。

公开(公告)号：US20140159026A1

公开(公告)日：2014-06-12

申请号：US14130940

申请日：2013-06-05

申请人： PANASONIC CORPORATION

发明人： Yuko Okumoto ,  Akihito Miyamoto

IPC分类号： H01L51/05 ,  H01L27/32

CPC分类号： H01L51/0529 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/786 ,  H01L51/0004 ,  H01L51/0037 ,  H01L51/004 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2251/5315

摘要： A thin-film transistor including: a gate electrode that is located above a substrate; a gate insulating layer that faces the gate electrode; a partition that defines an opening and has higher liquid repellency than liquid repellency of the gate insulating layer, the opening having a surface of the gate insulating layer therewithin; a semiconductor layer that faces the gate electrode with the gate insulating layer interposed therebetween and is formed within the opening by an application method; a source electrode and a drain electrode that are electrically connected to the semiconductor layer; and an intermediate layer that is made of the same material as a material of the partition and is located between the gate insulating layer and the semiconductor layer, wherein the intermediate layer is discretely present above the gate insulating layer.

摘要翻译： 1.一种薄膜晶体管，包括：位于基板上方的栅电极; 面对栅电极的栅极绝缘层; 限定开口并具有比栅极绝缘层的液体排斥性更高的液体排斥性的隔板，该开口具有栅极绝缘层的表面; 面向栅电极的半导体层，其间具有栅极绝缘层，并通过施加方法形成在开口内; 源电极和漏电极，其电连接到所述半导体层; 以及由与所述隔板的材料相同的材料制成并且位于所述栅极绝缘层和所述半导体层之间的中间层，其中所述中间层离散地存在于所述栅极绝缘层的上方。

公开(公告)号：US09117942B2

公开(公告)日：2015-08-25

申请号：US14551540

申请日：2014-11-24

申请人： PANASONIC CORPORATION

发明人： Akihito Miyamoto ,  Yuko Okumoto

IPC分类号： H01L29/08 ,  H01L21/00 ,  H01L51/40 ,  H01L33/00 ,  H01L29/786 ,  H01L33/36 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56 ,  H01L51/05 ,  H01L51/10

CPC分类号： H01L33/005 ,  H01L29/786 ,  H01L29/7869 ,  H01L33/0041 ,  H01L33/36 ,  H01L51/0004 ,  H01L51/0021 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105 ,  H01L51/5203 ,  H01L51/5296 ,  H01L51/56 ,  H01L2933/0016 ,  Y02B20/343

摘要： An electronic device including: a substrate; a bank formed above the substrate; a semiconductor layer formed within an aperture surrounded by the bank; and electrodes electrically connected to the semiconductor layer. An outline of the aperture in plan view includes a first straight edge, a second straight edge continuous with one end of the first edge via a first connector, and a straight third edge continuous with the other end of the first edge via a second connector. The area of a first connector region differs from the area of a second connector region, the first connector region being defined by a first imaginary straight line along the first edge, a second imaginary straight line along the second edge, and the first connector, and the second connector region being defined by a third imaginary straight line along the third edge, the first imaginary straight line, and the second connector.

摘要翻译： 一种电子设备，包括：基板; 在基板上方形成一个银行; 半导体层，形成在由所述堤包围的孔内; 以及与半导体层电连接的电极。 平面视图中的孔径的轮廓包括第一直边缘，经由第一连接器与第一边缘的一端连续的第二直边缘，以及经由第二连接器与第一边缘的另一端连续的直的第三边缘。 第一连接器区域的区域与第二连接器区域的区域不同，第一连接器区域由沿着第一边缘的第一假想直线，沿着第二边缘的第二假想直线和第一连接器限定，以及 第二连接器区域由沿着第三边缘的第三假想直线，第一假想直线和第二连接器限定。

公开(公告)号：US08994186B2

公开(公告)日：2015-03-31

申请号：US14061057

申请日：2013-10-23

申请人： Panasonic Corporation

发明人： Yuko Okumoto ,  Akihito Miyamoto ,  Takaaki Ukeda

IPC分类号： H01L29/40 ,  H01L21/4763 ,  H01L27/12 ,  H01L27/32 ,  H01L51/05

CPC分类号： H01L27/3274 ,  H01L27/1292 ,  H01L27/3248 ,  H01L51/0508 ,  H01L51/0558

摘要： A thin film transistor element includes: a gate electrode; a source electrode and a drain electrode; an insulating layer; partition walls; and an organic semiconductor layer. The partition walls define a first aperture. Within the first aperture, at least a part of the source electrode and at least a part of the drain electrode are in contact with the semiconductor layer. In plan view of the bottom of the first aperture, the center of the total of the areas of the source electrode and the drain electrode is offset from the center of the area of the bottom in a given direction.

摘要翻译： 薄膜晶体管元件包括：栅极; 源电极和漏电极; 绝缘层; 隔墙; 和有机半导体层。 分隔壁限定第一孔。 在第一孔内，源电极的至少一部分和漏电极的至少一部分与半导体层接触。 在第一孔的底部的平面图中，源电极和漏电极的总面积的中心在给定方向上偏离底部区域的中心。