发明授权
US08921978B2 Dual DNW isolation structure for reducing RF noise on high voltage semiconductor devices
有权
双DNW隔离结构，用于降低高压半导体器件的RF噪声
- 专利标题： Dual DNW isolation structure for reducing RF noise on high voltage semiconductor devices
- 专利标题（中）： 双DNW隔离结构，用于降低高压半导体器件的RF噪声
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申请号： US13347031申请日： 2012-01-10
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公开(公告)号： US08921978B2公开(公告)日： 2014-12-30
- 发明人: Chi-Feng Huang , Chia-Chung Chen , Victor Chiang Liang , Hsiao-Chun Lee
- 申请人： Chi-Feng Huang , Chia-Chung Chen , Victor Chiang Liang , Hsiao-Chun Lee
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 代理商 Mark J. Marcelli
- 主分类号： H01L21/70
- IPC分类号： H01L21/70
摘要：
An isolation structure in a semiconductor device absorbs electronic noise and prevents substrate leakage currents from reaching other devices and signals. The isolation structure provides a duality of deep N-well (“DNW”) isolation structures surrounding an RF device or other source of electronic noise. The DNW isolation structures extend into the substrate at a depth of at least about 2.5 μm and may be coupled to VDD. P+ guard rings are also provided in some embodiments and are provided inside, outside or between the dual DNW isolation structures.
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