公开(公告)号：US08921978B2

公开(公告)日：2014-12-30

申请号：US13347031

申请日：2012-01-10

申请人： Chi-Feng Huang ,  Chia-Chung Chen ,  Victor Chiang Liang ,  Hsiao-Chun Lee

发明人： Chi-Feng Huang ,  Chia-Chung Chen ,  Victor Chiang Liang ,  Hsiao-Chun Lee

IPC分类号： H01L21/70

CPC分类号： H01L21/823892 ,  H01L21/761 ,  H01L27/0928

摘要： An isolation structure in a semiconductor device absorbs electronic noise and prevents substrate leakage currents from reaching other devices and signals. The isolation structure provides a duality of deep N-well (“DNW”) isolation structures surrounding an RF device or other source of electronic noise. The DNW isolation structures extend into the substrate at a depth of at least about 2.5 μm and may be coupled to VDD. P+ guard rings are also provided in some embodiments and are provided inside, outside or between the dual DNW isolation structures.

摘要翻译： 半导体器件中的隔离结构吸收电子噪声并防止衬底漏电流到达其它器件和信号。 隔离结构提供了围绕RF器件或其他电子噪声源的深N阱（“DNW”）隔离结构的二元性。 DNW隔离结构在至少约2.5μm的深度延伸到衬底中，并且可以耦合到VDD。 在一些实施例中还提供了P +保护环，并且设置在双DNW隔离结构内部，外部或之间。